Issued Patents All Time
Showing 101–125 of 126 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8202773 | Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devices | Huang-Chun Wen | 2012-06-19 |
| 8198184 | Method to maximize nitrogen concentration at the top surface of gate dielectrics | James Joseph Chambers, Luigi Colombo | 2012-06-12 |
| 8058122 | Formation of metal gate electrode using rare earth alloy incorporated into mid gap metal | Manuel Quevedo-Lopez | 2011-11-15 |
| 7960802 | Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budget | James Joseph Chambers | 2011-06-14 |
| 7906441 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2011-03-15 |
| 7834743 | RFID tag and RFID tag communication distance modification method | Minehisa Nagata, Satoshi Tagiri, Izumi Usuki, Shinya Kemi, Shunsuke Kuhara | 2010-11-16 |
| 7799649 | Method for forming multi gate devices using a silicon oxide masking layer | Reima Laaksonen | 2010-09-21 |
| 7799668 | Formation of uniform silicate gate dielectrics | Luigi Colombo, James Joseph Chambers | 2010-09-21 |
| 7670913 | Method for forming ultra-thin low leakage multiple gate devices using a masking layer over the semiconductor substrate | Reima Laaksonen | 2010-03-02 |
| 7560792 | Reliable high voltage gate dielectric layers using a dual nitridation process | Rajesh Khamankar, Douglas T. Grider, April Gurba, Toan Tran, James Joseph Chambers | 2009-07-14 |
| 7459390 | Method for forming ultra thin low leakage multi gate devices | Reima Laaksonen | 2008-12-02 |
| 7393787 | Formation of nitrogen containing dielectric layers having a uniform nitrogen distribution therein using a high temperature chemical treatment | Reima Laaksonen, Mahalingam Nandakumar | 2008-07-01 |
| 7345001 | Gate dielectric having a flat nitrogen profile and method of manufacture therefor | Husam N. Alshareef, Rajesh Khamankar, Toan Tran | 2008-03-18 |
| 7268088 | Formation of low leakage thermally assisted radical nitrided dielectrics | — | 2007-09-11 |
| 7199020 | Nitridation of STI liner oxide for modulating inverse width effects in semiconductor devices | Manoj Mehrotra | 2007-04-03 |
| 7183165 | Reliable high voltage gate dielectric layers using a dual nitridation process | Rajesh Khamankar, Douglas T. Grider, April Gurba, Toan Tran, James Joseph Chambers | 2007-02-27 |
| 7163877 | Method and system for modifying a gate dielectric stack containing a high-k layer using plasma processing | Luigi Colombo, Koji Shimomura, Takuya Sugawara, Tatsuo Matsudo | 2007-01-16 |
| 7087440 | Monitoring of nitrided oxide gate dielectrics by determination of a wet etch | April Gurba, Husam N. Alshareef | 2006-08-08 |
| 6924239 | Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation | Husam N. Alshareef, Ajith Varghese | 2005-08-02 |
| 6921703 | System and method for mitigating oxide growth in a gate dielectric | Malcolm J. Bevan, Haowen Bu, Husam N. Alshareef | 2005-07-26 |
| 6780719 | Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures | Rajesh Khamankar, James Joseph Chambers, Sunil Hattangady, Antonio Luis Pacheco Rotondaro | 2004-08-24 |
| 6730566 | Method for non-thermally nitrided gate formation for high voltage devices | Rajesh Khamankar, Husam N. Alshareef | 2004-05-04 |
| 6632747 | Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile | Douglas T. Grider, Rajesh Khamankar, Sunil Hattangady | 2003-10-14 |
| 6610614 | Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates | Sunil Hattangady, Rajesh Khamankar | 2003-08-26 |
| 6548366 | Method of two-step annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile | Douglas T. Grider, Rajesh Khamankar | 2003-04-15 |