Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6956267 | Semiconductor with a nitrided silicon gate oxide and method | Jaideep Mavoori, Che-Jen Hu, Rajesh Khamankar | 2005-10-18 |
| 6780719 | Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures | Hiroaki Niimi, Rajesh Khamankar, James Joseph Chambers, Antonio Luis Pacheco Rotondaro | 2004-08-24 |
| 6716695 | Semiconductor with a nitrided silicon gate oxide and method | Jaideep Mavoori, Che-Jen Hu, Rajesh Khamankar | 2004-04-06 |
| 6632747 | Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile | Hiroaki Niimi, Douglas T. Grider, Rajesh Khamankar | 2003-10-14 |
| 6610614 | Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates | Hiroaki Niimi, Rajesh Khamankar | 2003-08-26 |
| 6423648 | Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent | Ming-Jang Hwang, Paul Tiner | 2002-07-23 |
| 6420729 | Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics | Robert M. Wallace, Glen Wilk, Yi Wei | 2002-07-16 |
| 6399445 | Fabrication technique for controlled incorporation of nitrogen in gate dielectric | Srikanth Krishnan, Robert J. Kraft | 2002-06-04 |
| 6352941 | Controllable oxidation technique for high quality ultrathin gate oxide formation | Ming-Jang Hwang, Paul Tiner | 2002-03-05 |
| 6331492 | Nitridation for split gate multiple voltage devices | George R. Misium | 2001-12-18 |
| 6323114 | Stacked/composite gate dielectric which incorporates nitrogen at an interface | Tad Grider, John W. Kuehne | 2001-11-27 |
| 6277681 | Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics | Robert M. Wallace, Glen Wilk, Yi Wei | 2001-08-21 |
| 6268296 | Low temperature process for multiple voltage devices | George R. Misium | 2001-07-31 |
| 6261973 | Remote plasma nitridation to allow selectively etching of oxide | George R. Misium | 2001-07-17 |
| 6251761 | Process for polycrystalline silicon gates and high-K dielectric compatibility | Mark S. Rodder | 2001-06-26 |
| 6140024 | Remote plasma nitridation for contact etch stop | George R. Misium | 2000-10-31 |
| 6136654 | Method of forming thin silicon nitride or silicon oxynitride gate dielectrics | Robert J. Kraft, Douglas T. Grider | 2000-10-24 |
| 6110842 | Method of forming multiple gate oxide thicknesses using high density plasma nitridation | Yasutoshi Okuno | 2000-08-29 |
| 5989962 | Semiconductor device having dual gate and method of formation | Thomas C. Holloway | 1999-11-23 |
| 5970345 | Method of forming an integrated circuit having both low voltage and high voltage MOS transistors | George R. Misium | 1999-10-19 |
| 5168330 | Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer | Daniel J. Vitkavage, Gaius Gillman Fountain, Jr., Ronald A. Rudder, Robert J. Markunas | 1992-12-01 |