SH

Sunil Hattangady

TI Texas Instruments: 20 patents #603 of 12,488Top 5%
RI Research Triangle Institute: 1 patents #166 of 344Top 50%
Overall (All Time): #211,680 of 4,157,543Top 6%
21
Patents All Time

Issued Patents All Time

Patent #TitleCo-InventorsDate
6956267 Semiconductor with a nitrided silicon gate oxide and method Jaideep Mavoori, Che-Jen Hu, Rajesh Khamankar 2005-10-18
6780719 Method for annealing ultra-thin, high quality gate oxide layers using oxidizer/hydrogen mixtures Hiroaki Niimi, Rajesh Khamankar, James Joseph Chambers, Antonio Luis Pacheco Rotondaro 2004-08-24
6716695 Semiconductor with a nitrided silicon gate oxide and method Jaideep Mavoori, Che-Jen Hu, Rajesh Khamankar 2004-04-06
6632747 Method of ammonia annealing of ultra-thin silicon dioxide layers for uniform nitrogen profile Hiroaki Niimi, Douglas T. Grider, Rajesh Khamankar 2003-10-14
6610614 Method for uniform nitridization of ultra-thin silicon dioxide layers in transistor gates Hiroaki Niimi, Rajesh Khamankar 2003-08-26
6423648 Controllable oxidation technique for the formation of high-quality ultra-thin gate oxide using carbon dioxide as the oxidizing agent Ming-Jang Hwang, Paul Tiner 2002-07-23
6420729 Process to produce ultrathin crystalline silicon nitride on Si (111) for advanced gate dielectrics Robert M. Wallace, Glen Wilk, Yi Wei 2002-07-16
6399445 Fabrication technique for controlled incorporation of nitrogen in gate dielectric Srikanth Krishnan, Robert J. Kraft 2002-06-04
6352941 Controllable oxidation technique for high quality ultrathin gate oxide formation Ming-Jang Hwang, Paul Tiner 2002-03-05
6331492 Nitridation for split gate multiple voltage devices George R. Misium 2001-12-18
6323114 Stacked/composite gate dielectric which incorporates nitrogen at an interface Tad Grider, John W. Kuehne 2001-11-27
6277681 Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics Robert M. Wallace, Glen Wilk, Yi Wei 2001-08-21
6268296 Low temperature process for multiple voltage devices George R. Misium 2001-07-31
6261973 Remote plasma nitridation to allow selectively etching of oxide George R. Misium 2001-07-17
6251761 Process for polycrystalline silicon gates and high-K dielectric compatibility Mark S. Rodder 2001-06-26
6140024 Remote plasma nitridation for contact etch stop George R. Misium 2000-10-31
6136654 Method of forming thin silicon nitride or silicon oxynitride gate dielectrics Robert J. Kraft, Douglas T. Grider 2000-10-24
6110842 Method of forming multiple gate oxide thicknesses using high density plasma nitridation Yasutoshi Okuno 2000-08-29
5989962 Semiconductor device having dual gate and method of formation Thomas C. Holloway 1999-11-23
5970345 Method of forming an integrated circuit having both low voltage and high voltage MOS transistors George R. Misium 1999-10-19
5168330 Semiconductor device having a semiconductor substrate interfaced to a dissimilar material by means of a single crystal pseudomorphic interlayer Daniel J. Vitkavage, Gaius Gillman Fountain, Jr., Ronald A. Rudder, Robert J. Markunas 1992-12-01