Issued Patents All Time
Showing 26–50 of 57 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9611544 | Plasma activated conformal dielectric film deposition | Adrien LaVoie | 2017-04-04 |
| 9570274 | Plasma activated conformal dielectric film deposition | Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Vishwanathan Rangarajan +3 more | 2017-02-14 |
| 9443716 | Precise critical dimension control using bilayer ALD | Kenji Takeshita, Nobuhiro Sakamoto, Yoshihiro Takenaga, Li-Qun Xia | 2016-09-13 |
| 9230800 | Plasma activated conformal film deposition | Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh +9 more | 2016-01-05 |
| 9117668 | PECVD deposition of smooth silicon films | Alice Hollister, Sirish Reddy, Keith Fox, Joe Womack | 2015-08-25 |
| 9028924 | In-situ deposition of film stacks | Jason Dirk Haverkamp, Pramod Subramonium, Joe Womack, Dong Niu, Keith Fox +5 more | 2015-05-12 |
| 9023731 | Carbon deposition-etch-ash gap fill process | Chunhai Ji, Sirish Reddy, Tuo Wang | 2015-05-05 |
| 8999859 | Plasma activated conformal dielectric film deposition | Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Vishwanathan Rangarajan +3 more | 2015-04-07 |
| 8956983 | Conformal doping via plasma activated atomic layer deposition and conformal film deposition | Shankar Swaminathan, Bart J. van Schravendijk, Pramod Subramonium, Adrien LaVoie | 2015-02-17 |
| 8741394 | In-situ deposition of film stacks | Jason Dirk Haverkamp, Pramod Subramonium, Joe Womack, Dong Niu, Keith Fox +5 more | 2014-06-03 |
| 8728956 | Plasma activated conformal film deposition | Adrien LaVoie, Shankar Swaminathan, Hu Kang, Ramesh Chandrasekharan, Tom Dorsh +9 more | 2014-05-20 |
| 8709551 | Smooth silicon-containing films | Keith Fox, Dong Niu, Joe Womack, George Andrew Antonelli, Bart J. van Schravendijk +1 more | 2014-04-29 |
| 8637411 | Plasma activated conformal dielectric film deposition | Shankar Swaminathan, Jon Henri, Dennis M. Hausmann, Pramod Subramonium, Vishwanathan Rangarajan +3 more | 2014-01-28 |
| 8524612 | Plasma-activated deposition of conformal films | Ming Li, Hu Kang, Adrien LaVoie | 2013-09-03 |
| 8479683 | Apparatus including a plasma chamber and controller including instructions for forming a boron nitride layer | George Andrew Antonelli, Vishwanathan Rangarajan, Pramod Subramonium | 2013-07-09 |
| 8362571 | High compressive stress carbon liners for MOS devices | Qingguo Wu, James S. Sims, Seshasayee Varadarajan, Haiying Fu, Pramod Subramonium +2 more | 2013-01-29 |
| 8317923 | Protective self-aligned buffer layers for damascene interconnects | Kaushik Chattopadhyay, Bart J. van Schravendijk, Yongsik Yu | 2012-11-27 |
| 8288292 | Depositing conformal boron nitride film by CVD without plasma | George Andrew Antonelli, Vishwanathan Rangarajan, Pramod Subramonium | 2012-10-16 |
| 8217513 | Remote plasma processing of interface surfaces | George Andrew Antonelli, Jennifer O'Loughlin, Tony Xavier, Bart J. van Schravendijk, Vishwanathan Rangarajan +2 more | 2012-07-10 |
| 8101531 | Plasma-activated deposition of conformal films | Ming Li, Hu Kang, Adrien LaVoie | 2012-01-24 |
| 8084339 | Remote plasma processing of interface surfaces | George Andrew Antonelli, Jennifer O'Loughlin, Tony Xavier, Bart J. van Schravendijk, Vishwanathan Rangarajan +2 more | 2011-12-27 |
| 8021486 | Protective self-aligned buffer layers for damascene interconnects | Yongsik Yu, Roey Shaviv, Kaushik Chattopadhyay, Hui-Jung Wu | 2011-09-20 |
| 7998881 | Method for making high stress boron-doped carbon films | Qingguo Wu, James S. Sims, Seshasayee Varadarajan, Akhil Singhal | 2011-08-16 |
| 7906817 | High compressive stress carbon liners for MOS devices | Qingguo Wu, James S. Sims, Seshasayee Varadarajan, Haiying Fu, Pramod Subramonium +2 more | 2011-03-15 |
| 7858510 | Interfacial layers for electromigration resistance improvement in damascene interconnects | Ananda Banerji, George Andrew Antonelli, Jennifer O'Loughlin, Bart J. van Schravendijk, Seshasayee Varadarajan | 2010-12-28 |