Issued Patents All Time
Showing 25 most recent of 183 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12433020 | Multi-VT solution for replacement metal gate bonded stacked FET | Dechao Guo, Junli Wang, Heng Wu | 2025-09-30 |
| 12402408 | Stacked FETS including devices with thick gate oxide | Ruilong Xie, Julien Frougier, Nicolas Loubet, Junli Wang, Min Gyu Sung +2 more | 2025-08-26 |
| 12317555 | Gate-all-around nanosheet field effect transistor integrated with fin field effect transistor | Julien Frougier, Sagarika Mukesh, Andrew M. Greene, Jingyun Zhang, Nicolas Loubet +1 more | 2025-05-27 |
| 12310072 | Middle of line structure with stacked devices | Junli Wang, Su Chen Fan, Albert M. Young | 2025-05-20 |
| 12310100 | Dielectric reflow for boundary control | Jing Guo, Ekmini Anuja De Silva, Nicolas Loubet, Indira Seshadri, Nelson Felix | 2025-05-20 |
| 12278237 | Stacked FETS with non-shared work function metals | Ruilong Xie, Julien Frougier, Junli Wang, Dechao Guo, Rishikesh Krishnan +1 more | 2025-04-15 |
| 12176250 | Metal gate boundary for transistor scaling | Dechao Guo | 2024-12-24 |
| 12176348 | Self-aligned hybrid substrate stacked gate-all-around transistors | Junli Wang, Dechao Guo | 2024-12-24 |
| 12142636 | Sidewall epitaxy encapsulation for nanosheet I/O device | Shogo Mochizuki | 2024-11-12 |
| 12107168 | Independent gate length tunability for stacked transistors | Junli Wang, Dechao Guo | 2024-10-01 |
| 12068387 | Multiple threshold voltage scheme in complementary metal oxide semiconductor transistors | — | 2024-08-20 |
| 12034005 | Self-aligned metal gate with poly silicide for vertical transport field-effect transistors | Brent A. Anderson, Dechao Guo, Vijay Narayanan | 2024-07-09 |
| 12015069 | Gate-all-around field effect transistor having multiple threshold voltages | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega, Tenko Yamashita | 2024-06-18 |
| 11961895 | Gate stacks with multiple high-κ dielectric layers | Ravikumar Ramachandran, Barry P. Linder, Shahab Siddiqui, Elnatan Mataev | 2024-04-16 |
| 11908743 | Planar devices with consistent base dielectric | Huimei Zhou, Andrew M. Greene, Julien Frougier, Jingyun Zhang, Miaomiao Wang +1 more | 2024-02-20 |
| 11894423 | Contact resistance reduction in nanosheet device structure | Heng Wu, Dechao Guo, Junli Wang, Lan Yu, Reinaldo Vega +1 more | 2024-02-06 |
| 11804522 | Sidewall epitaxy encapsulation for nanosheet I/O device | Shogo Mochizuki | 2023-10-31 |
| 11749744 | Fin structure for vertical transport field effect transistor | Heng Wu, Lan Yu, Dechao Guo, Junli Wang, Ruilong Xie | 2023-09-05 |
| 11749680 | Multi-threshold voltage non-planar complementary metal-oxide-semiconductor devices | Koji Watanabe | 2023-09-05 |
| 11735593 | Gate stack dipole compensation for threshold voltage definition in transistors | Jingyun Zhang, Koji Watanabe, Jing Guo | 2023-08-22 |
| 11710521 | Static random-access memory cell design | Lan Yu, Junli Wang, Heng Wu, Dechao Guo | 2023-07-25 |
| 11688635 | Oxygen-free replacement liner for improved transistor performance | Heng Wu, Dechao Guo, Junli Wang | 2023-06-27 |
| 11605634 | Multi-threshold voltage non-planar complementary metal-oxide-semiconductor devices | Koji Watanabe | 2023-03-14 |
| 11569132 | Transistor structure with N/P boundary buffer | Romain Lallement, Indira Seshadri | 2023-01-31 |
| 11515431 | Enabling residue free gap fill between nanosheets | Indira Seshadri, Ekmini Anuja De Silva, Jing Guo, Muthumanickam Sankarapandian, Nelson Felix | 2022-11-29 |