| 8101518 |
Method and process for forming a self-aligned silicide contact |
Cyril Cabral, Jr., Michael A. Cobb, Asa Frye, Balasubramanian S. Pranatharthi Haran, Randolph F. Knarr +5 more |
2012-01-24 |
| 7772866 |
Structure and method of mapping signal intensity to surface voltage for integrated circuit inspection |
Oliver D. Patterson, Min-Chul Sun |
2010-08-10 |
| 7544610 |
Method and process for forming a self-aligned silicide contact |
Cyril Cabral, Jr., Michael A. Cobb, Asa Frye, Balasubramanian S. Pranatharthi Haran, Randolph F. Knarr +5 more |
2009-06-09 |
| 7474107 |
Buried short location determination using voltage contrast inspection |
Oliver D. Patterson |
2009-01-06 |
| 6784485 |
Diffusion barrier layer and semiconductor device containing same |
Stephan A. Cohen, Timothy J. Dalton, John A. Fitzsimmons, Stephen M. Gates, Lynne M. Gignac +5 more |
2004-08-31 |
| 6726996 |
Laminated diffusion barrier |
Edward Barth, Stephan A. Cohen, Chester T. Dziobkowski, John A. Fitzsimmons, Stephen M. Gates +3 more |
2004-04-27 |
| 6646345 |
Method for forming Co-W-P-Au films |
Carlos J. Sambucetti, Judith M. Rubino, Daniel C. Edelstein, Cyryl Cabral, Jr., George F. Walker +1 more |
2003-11-11 |
| 6509265 |
Process for manufacturing a contact barrier |
Patrick W. DeHaven, Anthony G. Domenicucci, Lynne M. Gignac, Glen L. Miles, Prabhat Tiwari +2 more |
2003-01-21 |
| 6417567 |
Flat interface for a metal-silicon contract barrier film |
Anthony G. Domenicucci, Lynne M. Gignac, Yun-Yu Wang, Kwong Hon Wong, Roy A. Carruthers +2 more |
2002-07-09 |
| 6413866 |
Method of forming a solute-enriched layer in a substrate surface and article formed thereby |
Lawrence A. Clevenger, Chenting Lin, Kenneth P. Rodbell, Stefan Weber, Roy Iggulden +2 more |
2002-07-02 |
| 6388327 |
Capping layer for improved silicide formation in narrow semiconductor structures |
Kenneth J. Giewont, Stephen Bruce Brodsky, Cyril Cabral, Jr., Anthony G. Domenicucci, Craig Ransom +2 more |
2002-05-14 |
| 6339007 |
Capacitor stack structure and method of fabricating description |
Yun-Yu Wang, Rajarao Jammy, Lee J. Kimball, David E. Kotecki, Jenny Lian +4 more |
2002-01-15 |
| 6323128 |
Method for forming Co-W-P-Au films |
Carlos J. Sambucetti, Judith M. Rubino, Daniel C. Edelstein, Cyryl Cabral, Jr., George F. Walker +1 more |
2001-11-27 |
| 6180521 |
Process for manufacturing a contact barrier |
Patrick W. DeHaven, Anthony G. Domenicucci, Lynne M. Gignac, Glen L. Miles, Prabhat Tiwari +2 more |
2001-01-30 |
| 6124639 |
Flat interface for a metal-silicon contact barrier film |
Anthony G. Domenicucci, Lynne M. Gignac, Yun-Yu Wang, Kwong Hon Wong |
2000-09-26 |
| 6068923 |
Use of argon sputtering to modify surface properties by thin film deposition |
Thomas Edward Dinan, Swami Mathad, Paul A. Totta |
2000-05-30 |
| 6022801 |
Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film |
Anthony G. Domenicucci, Lynne M. Gignac, Yun-Yu Wang, Kwong Hon Wong |
2000-02-08 |
| 5956573 |
Use of argon sputtering to modify surface properties by thin film deposition |
Thomas Edward Dinan, Swami Mathad, Paul A. Totta |
1999-09-21 |
| 5401677 |
Method of metal silicide formation in integrated circuit devices |
Robert D. Bailey, Cyril Cabral, Jr., Brian T. Cunningham, Hormazdyar M. Dalal, James M. E. Harper +2 more |
1995-03-28 |
