Issued Patents All Time
Showing 326–350 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9691856 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Amlan Majumdar, Justin K. Brask +3 more | 2017-06-27 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Ravi Pillarisetty, Willy Rachmady, Gilbert Dewey, Benjamin Chu-Kung +4 more | 2017-06-20 |
| 9685508 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2017-06-20 |
| 9680013 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Roza Kotlyar, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more | 2017-06-13 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2017-05-30 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Willy Rachmady +4 more | 2017-05-30 |
| 9640671 | Deep gate-all-around semiconductor device having germanium or group III-V active layer | Ravi Pillarisetty, Willy Rachmady, Van H. Le, Seung Hoon Sung, Jessica S. Kachian +5 more | 2017-05-02 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2017-05-02 |
| 9640537 | Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy | Niti Goel, Robert S. Chau, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more | 2017-05-02 |
| 9634007 | Trench confined epitaxially grown device layer(s) | Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Sansaptak Dasgupta, Van H. Le +7 more | 2017-04-25 |
| 9627384 | Transistors with high concentration of boron doped germanium | Anand S. Murthy, Glenn A. Glass, Tahir Ghani, Ravi Pillarisetty, Niloy Mukherjee +3 more | 2017-04-18 |
| 9614083 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-04-04 |
| 9614093 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty | 2017-04-04 |
| 9608055 | Semiconductor device having germanium active layer with underlying diffusion barrier layer | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Robert S. Chau, Harold W. Kennel | 2017-03-28 |
| 9608059 | Semiconductor device with isolated body portion | Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Patrick H. Keys +5 more | 2017-03-28 |
| 9590089 | Variable gate width for gate all-around transistors | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Robert S. Chau, Seung Hoon Sung | 2017-03-07 |
| 9583396 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more | 2017-02-28 |
| 9570614 | Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2017-02-14 |
| 9564490 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey | 2017-02-07 |
| 9548363 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Majumdar Amian, Justin K. Brask +3 more | 2017-01-17 |
| 9530878 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2016-12-27 |
| 9478635 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Marko Radosavljevic +5 more | 2016-10-25 |
| 9461160 | Non-planar III-N transistor | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2016-10-04 |
| 9450092 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Ravi Pillarisetty | 2016-09-20 |
| 9443936 | Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drains | Prashant Majhi, Mantu K. Hudait, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +2 more | 2016-09-13 |