Issued Patents All Time
Showing 301–325 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9929273 | Apparatus and methods of forming fin structures with asymmetric profile | Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Gilbert Dewey, Nadia M. Rahhal-Orabi +3 more | 2018-03-27 |
| 9911807 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty | 2018-03-06 |
| 9905651 | GE and III-V channel semiconductor devices having maximized compliance and free surface relaxation | Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Van H. Le, Marko Radosavljevic +8 more | 2018-02-27 |
| 9899505 | Conductivity improvements for III-V semiconductor devices | Marko Radosavljevic, Prashant Majhi, Niti Goel, Wilman Tsai, Niloy Mukherjee +3 more | 2018-02-20 |
| 9893149 | High mobility strained channels for fin-based transistors | Stephen M. Cea, Anand S. Murthy, Glenn A. Glass, Daniel B. Aubertine, Tahir Ghani +1 more | 2018-02-13 |
| 9876014 | Germanium-based quantum well devices | Ravi Pillarisetty, Been-Yih Jin, Benjamin Chu-Kung, Matthew V. Metz, Marko Radosavljevic +5 more | 2018-01-23 |
| 9865684 | Nanoscale structure with epitaxial film having a recessed bottom portion | Benjamin Chu-Kung, Van H. Le, Robert S. Chau, Sansaptak Dasgupta, Gilbert Dewey +8 more | 2018-01-09 |
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +3 more | 2017-12-26 |
| 9818884 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Ravi Pillarisetty, Willy Rachmady, Harold W. Kennel | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more | 2017-11-07 |
| 9806195 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2017-10-31 |
| 9806193 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Ravi Pillarisetty | 2017-10-31 |
| 9806180 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Prashant Majhi, Wilman Tsai | 2017-10-31 |
| 9799759 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2017-10-24 |
| 9768269 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Nancy Zelick, Robert S. Chau | 2017-09-19 |
| 9761724 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more | 2017-09-12 |
| 9755062 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2017-09-05 |
| 9748391 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-08-29 |
| 9711598 | Two-dimensional condensation for uniaxially strained semiconductor fins | Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2017-07-18 |
| 9711591 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby | Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more | 2017-07-18 |
| 9704981 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady +2 more | 2017-07-11 |
| 9698013 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2017-07-04 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Niloy Mukherjee | 2017-07-04 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2017-06-27 |