Issued Patents All Time
Showing 251–275 of 625 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10475706 | Making a defect free fin based device in lateral epitaxy overgrowth region | Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more | 2019-11-12 |
| 10461193 | Apparatus and methods to create a buffer which extends into a gated region of a transistor | Chandra S. Mohapatra, Gilbert Dewey, Anand S. Murthy, Glenn A. Glass, Willy Rachmady +2 more | 2019-10-29 |
| 10461082 | Well-based integration of heteroepitaxial N-type transistors with P-type transistors | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +2 more | 2019-10-29 |
| 10446685 | High-electron-mobility transistors with heterojunction dopant diffusion barrier | Chandra S. Mohapatra, Matthew V. Metz, Harold W. Kennel, Gilbert Dewey, Willy Rachmady +2 more | 2019-10-15 |
| 10431690 | High electron mobility transistors with localized sub-fin isolation | Willy Rachmady, Matthew V. Metz, Gilbert Dewey, Chandra S. Mohapatra, Anand S. Murthy +3 more | 2019-10-01 |
| 10418487 | Non-planar gate all-around device and method of fabrication thereof | Willy Rachmady, Ravi Pillarisetty, Van H. Le, Robert S. Chau, Jessica S. Kachian | 2019-09-17 |
| 10411007 | High mobility field effect transistors with a band-offset semiconductor source/drain spacer | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more | 2019-09-10 |
| 10403733 | Dielectric metal oxide cap for channel containing germanium | Gilbert Dewey, Ashish Agrawal, Benjamin Chu-Kung, Van H. Le, Matthew V. Metz +2 more | 2019-09-03 |
| 10388733 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty | 2019-08-20 |
| 10388764 | High-electron-mobility transistors with counter-doped dopant diffusion barrier | Chandra S. Mohapatra, Harold W. Kennel, Matthew V. Metz, Gilbert Dewey, Willy Rachmady +2 more | 2019-08-20 |
| 10388800 | Thin film transistor with gate stack on multiple sides | Seung Hoon Sung, Abhishek A. Sharma, Van H. Le, Gilbert Dewey, Tahir Ghani | 2019-08-20 |
| 10373977 | Transistor fin formation via cladding on sacrificial core | Glenn A. Glass, Anand S. Murthy, Daniel B. Aubertine, Tahir Ghani, Benjamin Chu-Kung +4 more | 2019-08-06 |
| 10367093 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2019-07-30 |
| 10355112 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Prashant Majhi, Wilman Tsai | 2019-07-16 |
| 10347767 | Transistor with a subfin layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Ravi Pillarisetty, Gilbert Dewey +1 more | 2019-07-09 |
| 10340374 | High mobility field effect transistors with a retrograded semiconductor source/drain | Gilbert Dewey, Willy Rachmady, Matthew V. Metz, Chandra S. Mohapatra, Sean T. Ma +2 more | 2019-07-02 |
| 10340275 | Stackable thin film memory | Elijah V. Karpov, Robert S. Chau, Niloy Mukherjee, Rafael Rios, Prashant Majhi +5 more | 2019-07-02 |
| 10319646 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Willy Rachmady +4 more | 2019-06-11 |
| 10304929 | Two-dimensional condensation for uniaxially strained semiconductor fins | Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2019-05-28 |
| 10290709 | Apparatus and methods to create an indium gallium arsenide active channel having indium rich surfaces | Glenn A. Glass, Anand S. Murthy, Chandra S. Mohapatra, Tahir Ghani, Willy Rachmady +2 more | 2019-05-14 |
| 10290614 | Group III-N transistors for system on chip (SOC) architecture integrating power management and radio frequency circuits | Han Wui Then, Robert S. Chau, Valluri Rao, Niloy Mukherjee, Marko Radosavljevic +2 more | 2019-05-14 |
| 10263079 | Apparatus and methods for forming a modulation doped non-planar transistor | Ravi Pillarisetty, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady, Gilbert Dewey | 2019-04-16 |
| 10263074 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2019-04-16 |
| 10249742 | Offstate parasitic leakage reduction for tunneling field effect transistors | Van H. Le, Gilbert Dewey, Benjamin Chu-Kung, Ashish Agrawal, Matthew V. Metz +8 more | 2019-04-02 |
| 10249740 | Ge nano wire transistor with GaAs as the sacrificial layer | Willy Rachmady, Matthew V. Metz, Van H. Le, Sanaz K. Gardner | 2019-04-02 |