Issued Patents All Time
Showing 151–175 of 552 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10319722 | Contact formation in semiconductor devices | Oleg Gluschenkov, Zuoguang Liu, Hiroaki Niimi, Joseph S. Washington | 2019-06-11 |
| 10312377 | Localized fin width scaling using a hydrogen anneal | Veeraraghavan S. Basker, Shogo Mochizuki, Chun-Chen Yeh | 2019-06-04 |
| 10297513 | Stacked vertical NFET and PFET | Chen Zhang | 2019-05-21 |
| 10297507 | Self-aligned vertical field-effect transistor with epitaxially grown bottom and top source drain regions | Kangguo Cheng, Shogo Mochizuki, Chen Zhang | 2019-05-21 |
| 10297452 | Methods of forming a gate contact structure for a transistor | Ruilong Xie, Hui Zang, Kangguo Cheng, Chun-Chen Yeh | 2019-05-21 |
| 10283423 | Test structure macro for monitoring dimensions of deep trench isolation regions and local trench isolation regions | Chun-Chen Yeh, Hui Zang | 2019-05-07 |
| 10276659 | Air gap adjacent a bottom source/drain region of vertical transistor device | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-04-30 |
| 10269983 | Stacked nanosheet field-effect transistor with air gap spacers | Julien Frougier, Ruilong Xie, Hui Zang, Kangguo Cheng, Chun-Chen Yeh | 2019-04-23 |
| 10269920 | Nanosheet transistors having thin and thick gate dielectric material | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-04-23 |
| 10256231 | Forming vertical transistors and metal-insulator-metal capacitors on the same chip | Kangguo Cheng, Ruilong Xie, Chun-Chen Yeh | 2019-04-09 |
| 10249538 | Method of forming vertical field effect transistors with different gate lengths and a resulting structure | Yi Qi, Hsien-Ching Lo, Jianwei Peng, Wei Hong, Yanping Shen +5 more | 2019-04-02 |
| 10249502 | Low resistance source drain contact formation with trench metastable alloys and laser annealing | Oleg Gluschenkov, Zuoguang Liu, Shogo Mochizuki, Hiroaki Niimi, Chun-Chen Yeh | 2019-04-02 |
| 10243042 | FinFET with reduced parasitic capacitance | Kangguo Cheng, Darsen D. Lu, Xin Miao | 2019-03-26 |
| 10236363 | Vertical field-effect transistors with controlled dimensions | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-03-19 |
| 10229987 | Epitaxial and silicide layer formation at top and bottom surfaces of semiconductor fins | Kangguo Cheng, Zuoguang Liu, Ruilong Xie | 2019-03-12 |
| 10229982 | Pure boron for silicide contact | Chia-Yu Chen, Zuoguang Liu, Sanjay C. Mehta | 2019-03-12 |
| 10229915 | Mirror contact capacitor | Terence B. Hook, Joshua M. Rubin | 2019-03-12 |
| 10229905 | Electrostatic discharge devices and methods of manufacture | Huiming Bu, Junjun Li, Theodorus E. Standaert | 2019-03-12 |
| 10224207 | Forming a contact for a tall fin transistor | Kangguo Cheng, Ruilong Xie | 2019-03-05 |
| 10224417 | Fin field effect transistor fabrication and devices having inverted T-shaped gate | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-03-05 |
| 10224420 | Punch through stopper in bulk finFET device | Veeraraghavan S. Basker, Zuoguang Liu, Chun-Chen Yeh | 2019-03-05 |
| 10217672 | Vertical transistor devices with different effective gate lengths | Ruilong Xie, Chun-Chen Yeh, Kangguo Cheng | 2019-02-26 |
| 10211225 | FinFET devices wit multiple channel lengths | Effendi Leobandung | 2019-02-19 |
| 10211207 | Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devices | Praneet Adusumilli, Oleg Gluschenkov, Dechao Guo, Zuoguang Liu, Rajasekhar Venigalla | 2019-02-19 |
| 10211094 | Hybrid source and drain contact formation using metal liner and metal insulator semiconductor contacts | Hiroaki Niimi, Shariq Siddiqui | 2019-02-19 |