| 8105924 |
Deep trench based far subcollector reachthrough |
Bradley A. Orner, David C. Sheridan, Steven H. Voldman |
2012-01-31 |
$4,013,000 |
| 8101494 |
Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors |
David S. Collins, Kai D. Feng, Zhong-Xiang He, Peter J. Lindgren |
2012-01-24 |
$7,514,000 |
| 8035190 |
Semiconductor devices |
Xuefeng Liu, Steven H. Voldman |
2011-10-11 |
$5,277,000 |
| 8022496 |
Semiconductor structure and method of manufacture |
Douglas D. Coolbaugh, Alvin J. Joseph, Seong-Dong Kim, Louis D. Lanzerotti, Xuefeng Liu |
2011-09-20 |
$5,575,000 |
| 8015538 |
Design structure with a deep sub-collector, a reach-through structure and trench isolation |
Douglas D. Coolbaugh, Xuefeng Liu, David C. Sheridan, Steven H. Voldman |
2011-09-06 |
$5,472,000 |
| 8008142 |
Self-aligned Schottky diode |
Alan B. Botula, Alvin J. Joseph, Alan D. Norris, Yun Shi |
2011-08-30 |
$4,619,000 |
| 8008748 |
Deep trench varactors |
David S. Collins, Eric Thompson |
2011-08-30 |
$4,619,000 |
| 7994895 |
Heat sink for integrated circuit devices |
Douglas D. Coolbaugh, Ebenezer E. Eshun, Terence B. Hook, Edmund J. Sprogis, Anthony K. Stamper +1 more |
2011-08-09 |
$2,733,000 |
| 7989302 |
Methods of forming a hyper-abrupt P-N junction and design structures for an integrated circuit |
Jeffrey B. Johnson, Alvin J. Joseph, Yun Shi |
2011-08-02 |
$4,890,000 |
| 7989306 |
Method of forming alternating regions of Si and SiGe or SiGeC on a buried oxide layer on a substrate |
Xuefeng Liu, Steven H. Voldman |
2011-08-02 |
$4,890,000 |
| 7977714 |
Wrapped gate junction field effect transistor |
John J. Ellis-Monaghan, Richard A. Phelps, Steven H. Voldman, Michael J. Zierak |
2011-07-12 |
$4,098,000 |
| 7943445 |
Asymmetric junction field effect transistor |
Frederick G. Anderson, David S. Collins, Richard A. Phelps, Michael J. Zierak |
2011-05-17 |
$5,524,000 |
| 7936041 |
Schottky barrier diodes for millimeter wave SiGe BICMOS applications |
Jeffrey B. Johnson, Xuefeng Liu, Bradley A. Orner |
2011-05-03 |
$5,933,000 |
| 7919830 |
Method and structure for ballast resistor |
Douglas D. Coolbaugh, Ebenezer E. Eshun, Zhong-Xiang He, Kimball M. Watson |
2011-04-05 |
$6,033,000 |
| 7915134 |
Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material |
Anil K. Chinthakindi, Douglas D. Coolbaugh, Keith E. Downes, Ebenezer E. Eshun, Zhong-Xiang He +2 more |
2011-03-29 |
$5,031,000 |
| 7910450 |
Method of fabricating a precision buried resistor |
Anil K. Chinthakindi, Douglas D. Coolbaugh, Keith E. Downes, Ebenezer E. Eshun, John E. Florkey +3 more |
2011-03-22 |
$5,211,000 |
| 7902606 |
Double gate depletion mode MOSFET |
John B. Campi, Jr., Richard A. Phelps, Michael J. Zierak |
2011-03-08 |
$4,587,000 |
| 7868423 |
Optimized device isolation |
John Benoit, David S. Collins, Natalie B. Feilchenfeld, Michael L. Gautsch, Xuefeng Liu +2 more |
2011-01-11 |
$2,856,000 |
| 7829452 |
Terminal pad structures and methods of fabricating same |
Douglas D. Coolbaugh, Daniel C. Edelstein, Ebenezer E. Eshun, Zhong-Xiang He, Anthony K. Stamper |
2010-11-09 |
$6,046,000 |
| 7825441 |
Junction field effect transistor with a hyperabrupt junction |
Ebenezer E. Eshun, Jeffrey B. Johnson, Richard A. Phelps, Michael J. Zierak |
2010-11-02 |
$3,442,000 |
| 7821097 |
Lateral passive device having dual annular electrodes |
David S. Collins, Jeffrey B. Johnson, Xuefeng Liu, Bradley A. Orner, David C. Sheridan |
2010-10-26 |
$4,266,000 |
| 7812388 |
Deep trench capacitor and method of making same |
Timothy W. Kemerer, Steven M. Shank, Francis R. White |
2010-10-12 |
$6,128,000 |
| 7804119 |
Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit |
Jeffrey B. Johnson, Alvin J. Joseph, Yun Shi |
2010-09-28 |
$9,053,000 |
| 7755161 |
Semiconductor devices |
Xuefeng Liu, Steven H. Voldman |
2010-07-13 |
$6,420,000 |
| 7750408 |
Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuit |
Zhong-Xiang He, Steven H. Voldman |
2010-07-06 |
$3,063,000 |
