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Home › Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material

Method of integration of a MIM capacitor with a lower plate of metal gate material formed on an STI region or a silicide region formed in or on the surface of a doped well with a high K dielectric material

US Patent 7915134 · Granted Mar 29, 2011

Estimated economic value: $5,031,000 ⓘ

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