Issued Patents All Time
Showing 126–150 of 283 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10340341 | Self-limiting and confining epitaxial nucleation | Robin Hsin Kuo Chao, Kangguo Cheng | 2019-07-02 |
| 10340340 | Multiple-threshold nanosheet transistors | Ruqiang Bao, Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega +1 more | 2019-07-02 |
| 10340195 | Method to co-integrate SiGe and Si channels for finFET devices | Prasanna Khare, Qing Liu | 2019-07-02 |
| 10319676 | Vertically integrated nanosheet fuse | Robin Hsin Kuo Chao, James J. Demarest | 2019-06-11 |
| 10319816 | Silicon germanium fin channel formation | Hong He, Junli Wang | 2019-06-11 |
| 10304936 | Protection of high-K dielectric during reliability anneal on nanosheet structures | Sanjay C. Mehta, Vijay Narayanan, Muthumanickam Sankarapandian | 2019-05-28 |
| 10297665 | Co-integration of elastic and plastic relaxation on the same wafer | Stephen W. Bedell, Devendra K. Sadana | 2019-05-21 |
| 10283418 | Method of forming silicon germanium and silicon fins on oxide from bulk wafer | Hong He, James Kuss, Junli Wang | 2019-05-07 |
| 10276442 | Wrap-around contacts formed with multiple silicide layers | Ruilong Xie, Julien Frougier, Kangguo Cheng, Adra Carr | 2019-04-30 |
| 10262905 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Kangguo Cheng, Bruce B. Doris, Ali Khakifirooz, Qing Liu, Scott Luning | 2019-04-16 |
| 10262900 | Wimpy device by selective laser annealing | Kangguo Cheng, Xin Miao, Alexander Reznicek | 2019-04-16 |
| 10256316 | Steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-04-09 |
| 10256341 | Self-aligned silicon germanium FinFET with relaxed channel region | Pierre Morin | 2019-04-09 |
| 10249739 | Nanosheet MOSFET with partial release and source/drain epitaxy | Michael A. Guillorn, Terence B. Hook, Robert R. Robison, Reinaldo Vega | 2019-04-02 |
| 10242920 | Integrating and isolating NFET and PFET nanosheet transistors on a substrate | Michael A. Guillorn, Muthumanickam Sankarapandian | 2019-03-26 |
| 10204982 | Semiconductor device with relaxation reduction liner and associated methods | Pierre Morin, Qing Liu | 2019-02-12 |
| 10205022 | Method of making a semiconductor device using spacers for source/drain confinement | Pierre Morin | 2019-02-12 |
| 10199392 | FinFET device having a partially dielectric isolated fin structure | Ronald K. Sampson | 2019-02-05 |
| 10177226 | Preventing threshold voltage variability in stacked nanosheets | Michael A. Guillorn | 2019-01-08 |
| 10177255 | Semiconductor device with fin and related methods | Pierre Morin | 2019-01-08 |
| 10170475 | Silicon-on-nothing transistor semiconductor structure with channel epitaxial silicon region | Stephane Allegret-Maret, Kangguo Cheng, Bruce B. Doris, Prasanna Khare, Qing Liu | 2019-01-01 |
| 10170552 | Co-integration of silicon and silicon-germanium channels for nanosheet devices | Michael A. Guillorn, Isaac Lauer | 2019-01-01 |
| 10170546 | Fully substrate-isolated FinFET transistor | Prasanna Khare | 2019-01-01 |
| 10170520 | Negative-capacitance steep-switch field effect transistor with integrated bi-stable resistive system | Julien Frougier, Ruilong Xie, Daniel Chanemougame, Ali Razavieh, Kangguo Cheng | 2019-01-01 |
| 10141424 | Method of producing a channel structure formed from a plurality of strained semiconductor bars | Remi Coquand, Emmanuel Augendre, Shay Reboh | 2018-11-27 |