Issued Patents All Time
Showing 126–150 of 230 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9087784 | Structure and method of Tinv scaling for high k metal gate technology | Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2015-07-21 |
| 9068936 | Graphene sensor | Shu-Jen Han, Chung-Hsun Lin, Ning Su | 2015-06-30 |
| 9059006 | Replacement-gate-compatible programmable electrical antifuse | Satya N. Chakravarti, Chuck T. Le, Byoung W. Min, Thekkemadathil V. Rajeevakumar, Keith Kwong Hon Wong | 2015-06-16 |
| 9059091 | Transistor having replacement metal gate and process for fabricating the same | Keith Kwong Hon Wong | 2015-06-16 |
| 9059244 | Fabricating shallow-trench isolation semiconductor devices to reduce or eliminate oxygen diffusion | Ming Cai, Liyang Song, Chun-Chen Yeh | 2015-06-16 |
| 9059271 | Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation | Shu-Jen Han, Jeehwan Kim, Kuen-Ting Shiu | 2015-06-16 |
| 9059272 | Self-aligned III-V MOSFET fabrication with in-situ III-V epitaxy and in-situ metal epitaxy and contact formation | Shu-Jen Han, Jeehwan Kim, Kuen-Ting Shiu | 2015-06-16 |
| 9059291 | Semiconductor-on-insulator device including stand-alone well implant to provide junction butting | Wilfried Haensch, Gan Wang, Xin Wang, Yanfeng Wang, Keith Kwong Hon Wong | 2015-06-16 |
| 9048216 | Self aligned embedded gate carbon transistors | Shu-Jen Han, Yu Lu, Keith Kwong Hon Wong | 2015-06-02 |
| 9041057 | Field effect transistor device with shaped conduction channel | Shu-Jen Han, Chung-Hsun Lin | 2015-05-26 |
| 9040399 | Threshold voltage adjustment for thin body MOSFETs | MaryJane Brodsky, Ming Cai, William K. Henson, Shreesh Narasimha, Yue Liang +3 more | 2015-05-26 |
| 9041076 | Partial sacrificial dummy gate with CMOS device with high-k metal gate | Wilfried E. Haensch, Shu-Jen Han, Daniel Jaeger, Yu Lu, Keith Kwong Hon Wong | 2015-05-26 |
| 9034715 | Method and structure for dielectric isolation in a fin field effect transistor | Yanfeng Wang, Darsen D. Lu, Philip J. Oldiges, Gan Wang, Xin Wang | 2015-05-19 |
| 9006837 | Structure and method of Tinv scaling for high k metal gate technology | Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2015-04-14 |
| 8994080 | Stacked carbon-based FETs | Shu-Jen Han, Yu Lu, Keith Kwong Hon Wong | 2015-03-31 |
| 8969933 | Replacement gate MOSFET with a high performance gate electrode | Zhengwen Li, Randolph F. Knarr, Chengwen Pei, Gan Wang, Yanfeng Wang +3 more | 2015-03-03 |
| 8969187 | Self-aligned contacts | Wilfried Haensch, Shu-Jen Han, Chung-Hsun Lin | 2015-03-03 |
| 8957464 | Transistors with uniaxial stress channels | Ming Cai, Liyang Song, Chun-Chen Yeh | 2015-02-17 |
| 8952431 | Stacked carbon-based FETs | Shu-Jen Han, Yu Lu, Keith Kwong Hon Wong | 2015-02-10 |
| 8946853 | Diffusion sidewall for a semiconductor structure | Shu-Jen Han, Chung-Hsun Lin, Ning Su | 2015-02-03 |
| 8940595 | Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels | Bhupesh Chandra, Paul Chang, Gregory G. Freeman, Judson R. Holt, Arvind Kumar +6 more | 2015-01-27 |
| 8932949 | FinFET structure and method to adjust threshold voltage in a FinFET structure | Eduard A. Cartier, Brian J. Greene, Gan Wang, Yanfeng Wang, Keith Kwong Hon Wong | 2015-01-13 |
| 8928086 | Strained finFET with an electrically isolated channel | Henry K. Utomo, Kangguo Cheng, Ramachandra Divakaruni, Myung-Hee Na, Ravikumar Ramachandran +2 more | 2015-01-06 |
| 8927432 | Continuously scalable width and height semiconductor fins | Yang Liu, Chengwen Pei, Yue Tan | 2015-01-06 |
| 8927364 | Structure and method of high-performance extremely thin silicon on insulator complementary metal—oxide—semiconductor transistors with dual stress buried insulators | Ming Cai, Liyang Song, Chun-Chen Yeh | 2015-01-06 |