Issued Patents All Time
Showing 176–200 of 230 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8658505 | Embedded stressors for multigate transistor devices | Ming Cai, Pranita Kulkarni, Chun-Chen Yeh | 2014-02-25 |
| 8659091 | Embedded stressors for multigate transistor devices | Ming Cai, Pranita Kulkarni, Chun-Chen Yeh | 2014-02-25 |
| 8653602 | Transistor having replacement metal gate and process for fabricating the same | Keith Kwong Hon Wong | 2014-02-18 |
| 8648438 | Structure and method to form passive devices in ETSOI process flow | Ming Cai, Chun-Chen Yeh | 2014-02-11 |
| 8643115 | Structure and method of Tinv scaling for high κ metal gate technology | Michael P. Chudzik, Siddarth A. Krishnan, Unoh Kwon, Carl Radens, Shahab Siddiqui | 2014-02-04 |
| 8643120 | FinFET with fully silicided gate | Ming Cai, Chun-Chen Yeh | 2014-02-04 |
| 8633077 | Transistors with uniaxial stress channels | Ming Cai, Liyang Song, Chun-Chen Yeh | 2014-01-21 |
| 8610172 | FETs with hybrid channel materials | Shu-Jen Han, Edward W. Kiewra, Kuen-Ting Shiu | 2013-12-17 |
| 8605499 | Resonance nanoelectromechanical systems | Leland Chang, Michael A. Guillorn, Fei Liu, Keith Kwong Hon Wong | 2013-12-10 |
| 8598665 | Controlling threshold voltage in carbon based field effect transistors | Martin M. Frank, Shu-Jen Hen, Kuen-Ting Shiu | 2013-12-03 |
| 8592266 | Replacement gate MOSFET with a high performance gate electrode | Zhengwen Li, Randolph F. Knarr, Chengwen Pei, Gan Wang, Yanfeng Wang +3 more | 2013-11-26 |
| 8569135 | Replacement gate electrode with planar work function material layers | Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan | 2013-10-29 |
| 8541835 | Schottky FET fabricated with gate last process | Jin Cai, Marwan H. Khater, Christian Lavoie, Zhen Zhang | 2013-09-24 |
| 8536627 | Carbon implant for workfunction adjustment in replacement gate transistor | Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan | 2013-09-17 |
| 8536651 | Multi-gate transistor having sidewall contacts | Josephine B. Chang, Shu-Jen Han, Chung-Hsun Lin | 2013-09-17 |
| 8530315 | finFET with fully silicided gate | Ming Cai, Chun-Chen Yeh | 2013-09-10 |
| 8524614 | III-V compound semiconductor material passivation with crystalline interlayer | Kuen-Ting Shiu, Shu-Jen Han, Edward W. Kiewra, Masaharu Kobayashi | 2013-09-03 |
| 8519454 | Structure and process for metal fill in replacement metal gate integration | Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan | 2013-08-27 |
| 8513081 | Carbon implant for workfunction adjustment in replacement gate transistor | Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan | 2013-08-20 |
| 8513131 | Fin field effect transistor with variable channel thickness for threshold voltage tuning | Ming Cai, Chung-Hsun Lin, Chun-Chen Yeh | 2013-08-20 |
| 8492852 | Interface structure for channel mobility improvement in high-k metal gate stack | Tze-Chiang Chen, Philip J. Oldiges, Yanfeng Wang | 2013-07-23 |
| 8481415 | Self-aligned contact combined with a replacement metal gate/high-K gate dielectric | Jun Yuan, Kwong Hon Wong, Yanfeng Wang, Gan Wang | 2013-07-09 |
| 8470678 | Tensile stress enhancement of nitride film for stressed channel field effect transistor fabrication | Ming Cai, Chun-Chen Yeh, Pranita Kulkarni | 2013-06-25 |
| 8455862 | Self-aligned contacts in carbon devices | Josephine B. Chang, Shu-Jen Han, Chung-Hsun Lin | 2013-06-04 |
| 8455365 | Self-aligned carbon electronics with embedded gate electrode | Shu-Jen Han, Keith Kwong Hon Wong, Jun Yuan | 2013-06-04 |