Issued Patents All Time
Showing 476–500 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9190471 | Semiconductor structure having a source and a drain with reverse facets | Thomas N. Adam, Kangguo Cheng, Jinghong Li, Alexander Reznicek | 2015-11-17 |
| 9190411 | Retrograde doped layer for device isolation | Ajey Poovannummoottil Jacob, Steven Bentley, Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng +2 more | 2015-11-17 |
| 9190329 | Complex circuits utilizing fin structures | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2015-11-17 |
| 9190313 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Pranita Kerber, Arvind Kumar +1 more | 2015-11-17 |
| 9184179 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2015-11-10 |
| 9178068 | FinFET with oxidation-induced stress | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2015-11-03 |
| 9178019 | Fin isolation in multi-gate field effect transistors | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-11-03 |
| 9165836 | Methods of forming replacement gate structures using a gate height register process to improve gate height uniformity and the resulting integrated circuit products | Ruilong Xie, Michael Wedlake, Xiuyu Cai, Kangguo Cheng | 2015-10-20 |
| 9166049 | Method to enhance strain in fully isolated finFET structures | Nicolas Loubet, Pierre Morin, Sanjay C. Mehta | 2015-10-20 |
| 9159811 | Growing buffer layers in bulk finFET structures | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2015-10-13 |
| 9153647 | Integrated circuit having heterostructure FinFET with tunable device parameters and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-10-06 |
| 9153498 | Methods of forming semiconductor device with self-aligned contact elements and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2015-10-06 |
| 9147683 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Kangguo Cheng | 2015-09-29 |
| 9142651 | Methods of forming a FinFET semiconductor device so as to reduce punch-through leakage currents and the resulting device | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2015-09-22 |
| 9129938 | Methods of forming germanium-containing and/or III-V nanowire gate-all-around transistors | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-09-08 |
| 9129825 | Field effect transistor including a regrown contoured channel | Anirban Basu, Pouya Hashemi | 2015-09-08 |
| 9125575 | Flexible active matrix circuits for interfacing with biological tissue | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-09-08 |
| 9105577 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2015-08-11 |
| 9105518 | Method of large-area circuit layout recognition | Stephen W. Bedell, Bahman Hekmatshoar-Tabari, John A. Ott, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-08-11 |
| 9105606 | Self aligned contact with improved robustness | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan | 2015-08-11 |
| 9105663 | FinFET with silicon germanium stressor and method of forming | Kangguo Cheng, Nicolas Loubet, Shogo Mochizuki, Alexander Reznicek, Raghavasimhan Sreenivasan +1 more | 2015-08-11 |
| 9105691 | Contact isolation scheme for thin buried oxide substrate devices | Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Yannick Le Tiec, Qing Liu +1 more | 2015-08-11 |
| 9105723 | Multi-height FinFETs with coplanar topography | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-08-11 |
| 9105775 | Textured multi-junction solar cell and fabrication method | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-08-11 |
| 9093260 | Thin hetereostructure channel device | Thomas N. Adam, Kangguo Cheng, Hong He, Alexander Reznicek | 2015-07-28 |