Issued Patents All Time
Showing 526–550 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9059209 | Replacement gate ETSOI with sharp junction | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2015-06-16 |
| 9059212 | Back-end transistors with highly doped low-temperature contacts | Wilfried Haensch, Bahman Hekmatshoar-Tabari, Tak H. Ning, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-06-16 |
| 9059213 | Embedded DRAM for extremely thin semiconductor-on-insulator | Roger A. Booth, Jr., Kangguo Cheng, Joseph Ervin, Chengwen Pei, Ravi M. Todi +1 more | 2015-06-16 |
| 9059242 | FinFET semiconductor device having increased gate height control | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan | 2015-06-16 |
| 9059243 | Shallow trench isolation structures | Bruce B. Doris, Kangguo Cheng, Balasubramanian S. Haran, Pranita Kulkarni, Arvind Kumar +1 more | 2015-06-16 |
| 9059253 | Self-aligned contacts for replacement metal gate transistors | Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan, Thomas N. Adam | 2015-06-16 |
| 9059311 | CMOS transistors with identical active semiconductor region shapes | Veeraraghavan S. Basker, Kangguo Cheng | 2015-06-16 |
| 9059321 | Buried channel field-effect transistors | Kangguo Cheng, Pranita Kulkarni, Tak H. Ning | 2015-06-16 |
| 9059323 | Method of forming fin-field effect transistor (finFET) structure | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-06-16 |
| 9059005 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2015-06-16 |
| 9059014 | Integrated circuit diode | Kangguo Cheng, Pranita Kerber, Ghavam G. Shahidi | 2015-06-16 |
| 9059041 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Qing Liu, Laurent Grenouillet, Yannick Le Tiec +1 more | 2015-06-16 |
| 9059044 | On-chip diode with fully depleted semiconductor devices | Kangguo Cheng, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-06-16 |
| 9059139 | Raised source/drain and gate portion with dielectric spacer or air gap spacer | Thomas N. Adam, Kangguo Cheng, Juntao Li, Alexander Reznicek | 2015-06-16 |
| 9058992 | Lateral diode compatible with FinFET and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2015-06-16 |
| 9054218 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Hong He, Alexander Reznicek | 2015-06-09 |
| 9054211 | Compressively stressed FET device structures | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2015-06-09 |
| 9053946 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2015-06-09 |
| 9048262 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-06-02 |
| 9048108 | Integrated circuit with on chip planar diode and CMOS devices | Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2015-06-02 |
| 9041009 | Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device | Bruce B. Doris, Kangguo Cheng, Pranita Kerber | 2015-05-26 |
| 9040363 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2015-05-26 |
| 9040371 | Integration of dense and variable pitch fin structures | Kangguo Cheng, Matthew E. Colburn, Bruce B. Doris | 2015-05-26 |
| 9041062 | Silicon-on-nothing FinFETs | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2015-05-26 |
| 9041108 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2015-05-26 |