Issued Patents All Time
Showing 501–525 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9093478 | Integrated circuit structure with bulk silicon FinFET and methods of forming | Kangguo Cheng, Qizhi Liu, Edward J. Nowak, Jed H. Rankin | 2015-07-28 |
| 9093533 | FinFET structures having silicon germanium and silicon channels | Kangguo Cheng, Alexander Reznicek, Ghavam G. Shahidi | 2015-07-28 |
| 9093534 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Ramachandra Divakaruni, Bruce B. Doris, Edward J. Nowak, Kern Rim | 2015-07-28 |
| 9087796 | Semiconductor fabrication method using stop layer | Thomas N. Adam, Donald F. Canaperi, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan +1 more | 2015-07-21 |
| 9087851 | Silicon-based electronics with disabling feature | Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2015-07-21 |
| 9087852 | Method for manufacturing silicon-based electronics with disabling feature | Ali Afzali-Ardakani, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2015-07-21 |
| 9087859 | FinFET with enhanced embedded stressor | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-07-21 |
| 9087869 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-07-21 |
| 9087921 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2015-07-21 |
| 9087687 | Thin heterostructure channel device | Thomas N. Adam, Kangguo Cheng, Hong He, Alexander Reznicek | 2015-07-21 |
| 9087741 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2015-07-21 |
| 9087742 | High density multi-electrode array | Kangguo Cheng, Arjang Hassibi, Dharmendra S. Modha | 2015-07-21 |
| 9087792 | Integration of dense and variable pitch fin structures | Kangguo Cheng, Matthew E. Colburn, Bruce B. Doris | 2015-07-21 |
| 9087724 | Method and structure for finFET CMOS | Kangguo Cheng, Alexander Reznicek | 2015-07-21 |
| 9082853 | Bulk finFET with punchthrough stopper region and method of fabrication | Kangguo Cheng, Shom Ponoth, Ragvahasimhan Sreenivasan | 2015-07-14 |
| 9070771 | Bulk finFET with controlled fin height and high-k liner | Alexander Reznicek, Thomas N. Adam, Kangguo Cheng | 2015-06-30 |
| 9070788 | Integrated circuit with a thin body field effect transistor and capacitor | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2015-06-30 |
| 9064789 | Bonded epitaxial oxide structures for compound semiconductor on silicon substrates | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2015-06-23 |
| 9064890 | Methods of forming isolation material on FinFET semiconductor devices and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2015-06-23 |
| 9064698 | Thin-film gallium nitride structures grown on graphene | Davood Shahrjerdi | 2015-06-23 |
| 9059132 | Self aligned capacitor fabrication | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-06-16 |
| 9059164 | Embedded interlevel dielectric barrier layers for replacement metal gate field effect transistors | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2015-06-16 |
| 9059206 | Epitaxial grown extremely shallow extension region | Bruce B. Doris, Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-06-16 |
| 9059207 | Strained channel for depleted channel semiconductor devices | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Davood Shahrjerdi | 2015-06-16 |
| 9059208 | Replacement gate integration scheme employing multiple types of disposable gate structures | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2015-06-16 |