Issued Patents All Time
Showing 451–475 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9236389 | Embedded flash memory fabricated in standard CMOS process with self-aligned contact | Kangguo Cheng, Ramachandra Divakaruni, Subramanian S. Iyer | 2016-01-12 |
| 9224822 | High percentage silicon germanium alloy fin formation | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2015-12-29 |
| 9224811 | Stacked semiconductor device | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2015-12-29 |
| 9224607 | Dual epitaxy region integration | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan | 2015-12-29 |
| 9219154 | Method of fabricating electrostatically enhanced fins and stacked nanowire field effect transistors | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-12-22 |
| 9219139 | Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-12-22 |
| 9219129 | Inverted thin channel mosfet with self-aligned expanded source/drain | Bruce B. Doris, Kangguo Cheng, Douglas C. La Tulipe, Jr. | 2015-12-22 |
| 9219114 | Partial FIN on oxide for improved electrical isolation of raised active regions | Kangguo Cheng, Eric C. Harley, Terence B. Hook, Henry K. Utomo, Reinaldo Vega | 2015-12-22 |
| 9219078 | Simplified multi-threshold voltage scheme for fully depleted SOI MOSFETs | Kangguo Cheng, Bruce B. Doris, Qing Liu, Nicolas Loubet, Scott Luning | 2015-12-22 |
| 9214567 | Nanowire compatible E-fuse | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-12-15 |
| 9214553 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Witold P. Maszara, Kangguo Cheng | 2015-12-15 |
| 9214462 | Recessed source drain contact regions independent of device pitch by unmerged epitaxy on fin portions | Kangguo Cheng, Eric D. Marshall, Alexander Reznicek, Benjamen N. Taber | 2015-12-15 |
| 9214397 | Structure and method to modulate threshold voltage for high-K metal gate field effect transistors (FETs) | Bruce B. Doris, Kangguo Cheng, Steven J. Holmes, Pranita Kerber, Shom Ponoth +2 more | 2015-12-15 |
| 9209024 | Back-end transistors with highly doped low-temperature contacts | Wilfried E. Haensch, Bahman Hekmatshoar-Tabari, Tak H. Ning, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-12-08 |
| 9209065 | Engineered substrate and device for co-integration of strained silicon and relaxed silicon | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek | 2015-12-08 |
| 9209094 | Fin field effect transistor with dielectric isolation and anchored stressor elements | Kangguo Cheng, Ramachandra Divakaruni, Kern Rim | 2015-12-08 |
| 9209172 | FinFET and fin-passive devices | Kangguo Cheng, Ramachandra Divakaruni, Theodorus E. Standaert | 2015-12-08 |
| 9202893 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2015-12-01 |
| 9202689 | Transistor with improved sigma-shaped embedded stressor and method of formation | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2015-12-01 |
| 9202812 | Abrupt source/drain junction formation using a diffusion facilitation layer | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-12-01 |
| 9202864 | Integrated circuit having back gating, improved isolation and reduced well resistance and method to fabricate same | Jin Cai, Kangguo Cheng, Pranita Kerber | 2015-12-01 |
| 9196479 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2015-11-24 |
| 9196696 | Integrated circuits with improved gate uniformity and methods for fabricating same | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2015-11-24 |
| 9196613 | Stress inducing contact metal in FinFET CMOS | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2015-11-24 |
| 9190487 | Prevention of fin erosion for semiconductor devices | Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek, Raghavasimhan Sreenivasan +2 more | 2015-11-17 |