Issued Patents All Time
Showing 426–450 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9269815 | FinFET semiconductor device with a recessed liner that defines a fin height of the FinFet device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2016-02-23 |
| 9269629 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2016-02-23 |
| 9269589 | Dense finFET SRAM | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-02-23 |
| 9269575 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-02-23 |
| 9263616 | Selective emitter photovoltaic device | Bahman Hekmatshoartabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-02-16 |
| 9263584 | Field effect transistors employing a thin channel region on a crystalline insulator structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-16 |
| 9263466 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-02-16 |
| 9263465 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-02-16 |
| 9263453 | Secondary use of aspect ratio trapping holes as eDRAM structure | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-02-16 |
| 9263449 | FinFET and fin-passive devices | Kangguo Cheng, Ramachandra Divakaruni, Theodorus E. Standaert | 2016-02-16 |
| 9257536 | FinFET with crystalline insulator | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-02-09 |
| 9257527 | Nanowire transistor structures with merged source/drain regions using auxiliary pillars | Pouya Hashemi, Alexander Reznicek | 2016-02-09 |
| 9252014 | Trench sidewall protection for selective epitaxial semiconductor material formation | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-02-02 |
| 9252017 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-02 |
| 9252016 | Stacked nanowire | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-02-02 |
| 9245807 | Integrated circuit with a thin body field effect transistor and capacitor | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-01-26 |
| 9246003 | FINFET structures with fins recessed beneath the gate | Kangguo Cheng, Eric C. Harley, Yue Ke, Alexander Reznicek | 2016-01-26 |
| 9245981 | Dielectric filler fins for planar topography in gate level | Kangguo Cheng, Ramachandra Divakaruni, Bruce B. Doris, Edward J. Nowak, Kern Rim | 2016-01-26 |
| 9245903 | High voltage metal oxide semiconductor field effect transistor integrated into extremely thin semiconductor on insulator process | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2016-01-26 |
| 9240497 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Pranita Kerber | 2016-01-19 |
| 9240447 | finFETs containing improved strain benefit and self aligned trench isolation structures | Kangguo Cheng, Johnathan E. Faltermeier | 2016-01-19 |
| 9240355 | On-chip diode with fully depleted semicondutor devices | Kangguo Cheng, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-01-19 |
| 9236480 | Methods of forming finFET semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2016-01-12 |
| 9236463 | Compressive strained III-V complementary metal oxide semiconductor (CMOS) device | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-01-12 |
| 9236447 | Asymmetric spacers | Kangguo Cheng, Richard S. Wise | 2016-01-12 |