Issued Patents All Time
Showing 401–425 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9312128 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng +1 more | 2016-04-05 |
| 9299837 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299787 | Forming IV fins and III-V fins on insulator | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299777 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-29 |
| 9299719 | CMOS with dual raised source and drain for NMOS and PMOS | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran | 2016-03-29 |
| 9299703 | CMOS transistors with identical active semiconductor region shapes | Veeraraghavan S. Basker, Kangguo Cheng | 2016-03-29 |
| 9299618 | Structure and method for advanced bulk fin isolation | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-29 |
| 9293459 | Method and structure for improving finFET with epitaxy source/drain | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-03-22 |
| 9293373 | Method for fabricating CMOS finFETs with dual channel material | Kangguo Cheng, Alexander Reznicek, Pouya Hashemi | 2016-03-22 |
| 9293463 | CMOS transistors including gate spacers of the same thickness | Veeraraghavan S. Basker, Kangguo Cheng | 2016-03-22 |
| 9293474 | Dual channel hybrid semiconductor-on-insulator semiconductor devices | Kangguo Cheng, Bruce B. Doris, Qing Liu, Laurent Grenouillet, Yannick Le Tiec +1 more | 2016-03-22 |
| 9293530 | High aspect ratio trapping semiconductor with uniform height and isolated from bulk substrate | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-03-22 |
| 9293532 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-22 |
| 9293576 | Semiconductor device with low-k gate cap and self-aligned contact | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2016-03-22 |
| 9293583 | Finfet with oxidation-induced stress | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2016-03-22 |
| 9293588 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-03-22 |
| 9287358 | Stressed nanowire stack for field effect transistor | Martin M. Frank, Pouya Hashemi, Alexander Reznicek | 2016-03-15 |
| 9281381 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Bruce B. Doris, Tenko Yamashita, Chun-Chen Yeh | 2016-03-08 |
| 9281247 | Strained silicon and strained silicon germanium on insulator field-effect transistor | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2016-03-08 |
| 9281198 | Method of fabricating a semiconductor device including embedded crystalline back-gate bias planes | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-03-08 |
| 9276113 | Structure and method to make strained FinFET with improved junction capacitance and low leakage | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-03-01 |
| 9276002 | Integrated circuit structure with bulk silicon FinFET | Kangguo Cheng, Qizhi Liu, Edward J. Nowak, Jed H. Rankin | 2016-03-01 |
| 9275854 | Compound semiconductor integrated circuit and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-03-01 |
| 9269627 | Fin cut on SIT level | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-02-23 |