Issued Patents All Time
Showing 351–375 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9373743 | Silicon heterojunction photovoltaic device with wide band gap emitter | Bahman Hekmatshoar-Tabari, Devendra K. Sadana, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-06-21 |
| 9373691 | Transistor with bonded gate dielectric | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2016-06-21 |
| 9373639 | Thin channel-on-insulator MOSFET device with n+ epitaxy substrate and embedded stressor | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-06-21 |
| 9373637 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-06-21 |
| 9373507 | Defective P-N junction for backgated fully depleted silicon on insulator mosfet | Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Yannick Le Tiec, Qing Liu +1 more | 2016-06-21 |
| 9368492 | Forming fins of different materials on the same substrate | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-06-14 |
| 9362400 | Semiconductor device including dielectrically isolated finFETs and buried stressor | Kangguo Cheng, Bruce B. Doris, Darsen D. Lu, Alexander Reznicek, Kern Rim | 2016-06-07 |
| 9362362 | FinFET with dielectric isolated channel | Kangguo Cheng, Alexander Reznicek, Soon-Cheon Seo | 2016-06-07 |
| 9362310 | Method of manufacturing a FinFET device using a sacrificial epitaxy region for improved fin merge and FinFET device formed by same | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Hong He, Alexander Reznicek | 2016-06-07 |
| 9362309 | FinFET and method of fabrication | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-06-07 |
| 9362285 | Structure and method to increase contact area in unmerged EPI integration for CMOS FinFETs | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-07 |
| 9362182 | Forming strained fins of different material on a substrate | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-06-07 |
| 9362170 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-07 |
| 9356119 | MOSFETs with reduced contact resistance | Bruce B. Doris, Kangguo Cheng, Pranita Kerber | 2016-05-31 |
| 9356046 | Structure and method for forming CMOS with NFET and PFET having different channel materials | Kangguo Cheng, Bruce B. Doris, Steven J. Holmes | 2016-05-31 |
| 9356027 | Dual work function integration for stacked FinFET | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-05-31 |
| 9356019 | Integrated circuit with on chip planar diode and CMOS devices | Kangguo Cheng, Pranita Kerber, Ghavam G. Shahidi | 2016-05-31 |
| 9349861 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2016-05-24 |
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Ajey Poovannummoottil Jacob, Witold P. Maszara, Kangguo Cheng | 2016-05-24 |
| 9349835 | Methods for replacing gate sidewall materials with a low-k spacer | Kangguo Cheng, Alexander Reznicek, Charan V. Surisetty | 2016-05-24 |
| 9349809 | Aspect ratio trapping and lattice engineering for III/V semiconductors | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-05-24 |
| 9349808 | Double aspect ratio trapping | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-05-24 |
| 9349798 | CMOS structures with selective tensile strained NFET fins and relaxed PFET fins | Bruce B. Doris, Hong He, Joshua M. Rubin | 2016-05-24 |
| 9349658 | Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material | Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Kern Rim | 2016-05-24 |
| 9349594 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-05-24 |