Issued Patents All Time
Showing 326–350 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9406506 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Alexander Reznicek | 2016-08-02 |
| 9406529 | Formation of FinFET junction | Kevin K. Chan, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2016-08-02 |
| 9406545 | Bulk semiconductor fins with self-aligned shallow trench isolation structures | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-08-02 |
| 9406682 | Method and structure for preventing epi merging in embedded dynamic random access memory | Veeraraghavan S. Basker, Kangguo Cheng | 2016-08-02 |
| 9401373 | Multi-fin finFETs with merged-fin source/drains and replacement gates | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-07-26 |
| 9401334 | Preventing unauthorized use of integrated circuits for radiation-hard applications | Kangguo Cheng, Bruce B. Doris, Kenneth P. Rodbell | 2016-07-26 |
| 9401372 | Dual isolation on SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2016-07-26 |
| 9401311 | Self aligned structure and method for high-K metal gate work function tuning | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-07-26 |
| 9397094 | Semiconductor structure with an L-shaped bottom plate | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2016-07-19 |
| 9391069 | MIM capacitor with enhanced capacitance formed by selective epitaxy | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-07-12 |
| 9391077 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-07-12 |
| 9390939 | Methods of forming MIS contact structures for semiconductor devices and the resulting devices | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2016-07-12 |
| 9391091 | MOSFET with work function adjusted metal backgate | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2016-07-12 |
| 9390925 | Silicon—germanium (SiGe) fin formation | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-07-12 |
| 9385023 | Method and structure to make fins with different fin heights and no topography | Kangguo Cheng, Joel P. de Souza, Alexander Reznicek, Dominic J. Schepis | 2016-07-05 |
| 9385231 | Device structure with increased contact area and reduced gate capacitance | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2016-07-05 |
| 9378948 | FinFET structures having silicon germanium and silicon fins | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-06-28 |
| 9378972 | Integration of dense and variable pitch fin structures | Kangguo Cheng, Matthew E. Colburn, Bruce B. Doris | 2016-06-28 |
| 9379025 | Method of forming source/drain contacts in unmerged FinFETs | Veeraraghavan S. Basker, Kangguo Cheng | 2016-06-28 |
| 9379111 | Method of co-integration of strained silicon and strained germanium in semiconductor devices including fin structures | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-06-28 |
| 9379135 | FinFET semiconductor device having increased gate height control | Kangguo Cheng, Shom Ponoth, Raghavasimhan Sreenivasan | 2016-06-28 |
| 9379028 | SOI CMOS structure having programmable floating backplate | Jin Cai, Robert H. Dennard, Tak H. Ning, Jeng-Bang Yau | 2016-06-28 |
| 9379204 | Lattice matched aspect ratio trapping to reduce defects in III-V layer directly grown on silicon | Keith E. Fogel, Pouya Hashemi, Alexander Reznicek | 2016-06-28 |
| 9379218 | Fin formation in fin field effect transistors | Kangguo Cheng, Bruce B. Doris, Hong He, Yunpeng Yin | 2016-06-28 |
| 9379243 | Field-effect transistor with aggressively strained fins | Pouya Hashemi, Alexander Reznicek | 2016-06-28 |