Issued Patents All Time
Showing 376–400 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9343550 | Silicon-on-nothing FinFETs | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-05-17 |
| 9343529 | Method of formation of germanium nanowires on bulk substrates | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-05-17 |
| 9337196 | III-V FinFET CMOS with III-V and germanium-containing channel closely spaced | Kangguo Cheng, Alexander Reznicek, Ghavam G. Shahidi | 2016-05-10 |
| 9337259 | Structure and method to improve ETSOI MOSFETS with back gate | Kangguo Cheng, Bruce B. Doris, Pranita Kerber, Balasubramanian Pranatharthiharan | 2016-05-10 |
| 9331201 | Multi-height FinFETs with coplanar topography background | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-05-03 |
| 9330908 | Semiconductor structure with aspect ratio trapping capabilities | Thomas N. Adam, Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-05-03 |
| 9324870 | Fin field effect transistor including asymmetric raised active regions | Veeraraghavan S. Basker, Kangguo Cheng | 2016-04-26 |
| 9324867 | Method to controllably etch silicon recess for ultra shallow junctions | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-26 |
| 9324843 | High germanium content silicon germanium fins | Karthik Balakrishnan, John Bruley, Pouya Hashemi, John A. Ott, Alexander Reznicek | 2016-04-26 |
| 9324797 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-26 |
| 9324796 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-26 |
| 9324795 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-26 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more | 2016-04-26 |
| 9324709 | Self-aligned gate contact structure | Veeraraghavan S. Basker, Kangguo Cheng, Viraj Y. Sardesai, Raghavasimhan Sreenivasan | 2016-04-26 |
| 9318582 | Method of preventing epitaxy creeping under the spacer | Veeraraghavan S. Basker, Kangguo Cheng, Sreenivasan Raghavasimhan | 2016-04-19 |
| 9318580 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2016-04-19 |
| 9318553 | Nanowire device with improved epitaxy | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-04-19 |
| 9318489 | Complex circuits utilizing fin structures | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2016-04-19 |
| 9318384 | Dielectric liner for a self-aligned contact via structure | Veeraraghavan S. Basker, Kangguo Cheng | 2016-04-19 |
| 9312383 | Self-aligned contacts for vertical field effect transistors | Kangguo Cheng, Wilfried E. Haensch, Davood Shahrjerdi | 2016-04-12 |
| 9312367 | FinFET with a silicon germanium alloy channel and method of fabrication thereof | Kangguo Cheng, Bruce B. Doris, Hong He | 2016-04-12 |
| 9312360 | FinFET with epitaxial source and drain regions and dielectric isolated channel region | Kangguo Cheng, Ramachandra Divakaruni, Alexander Reznicek, Soon-Cheon Seo | 2016-04-12 |
| 9312275 | FinFET with reduced capacitance | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2016-04-12 |
| 9312273 | Structure and method to reduce crystal defects in epitaxial fin merge using nitride deposition | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek, Raghavasimhan Sreenivasan | 2016-04-12 |
| 9312173 | Self-limiting silicide in highly scaled fin technology | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-04-12 |