Issued Patents All Time
Showing 301–325 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9461169 | Device and method for fabricating thin semiconductor channel and buried strain memorization layer | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2016-10-04 |
| 9455250 | Distributed decoupling capacitor | Kangguo Cheng, Darsen D. Lu, Ghavam G. Shahidi | 2016-09-27 |
| 9455274 | Replacement fin process in SSOI wafer | Bruce B. Doris, Hong He, Junli Wang | 2016-09-27 |
| 9455323 | Under-spacer doping in fin-based semiconductor devices | Veeraraghavan S. Basker, Kangguo Cheng, Charles W. Koburger, III | 2016-09-27 |
| 9455330 | Recessing RMG metal gate stack for forming self-aligned contact | Xiuyu Cai, Kangguo Cheng, Ruilong Xie | 2016-09-27 |
| 9455331 | Method and structure of forming controllable unmerged epitaxial material | Xiuyu Cai, Kangguo Cheng, Ruilong Xie, Tenko Yamashita | 2016-09-27 |
| 9455336 | SiGe and Si FinFET structures and methods for making the same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-09-27 |
| 9455141 | Silicon-germanium fin of height above critical thickness | Kanggou Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-09-27 |
| 9450079 | FinFET having highly doped source and drain regions | Kangguo Cheng, Alexander Reznicek, Dominic J. Schepis | 2016-09-20 |
| 9443948 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-09-13 |
| 9437675 | eDRAM for planar III-V semiconductor devices | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-09-06 |
| 9437679 | Semi-conductor device with epitaxial source/drain facetting provided at the gate edge | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-09-06 |
| 9437680 | Silicon-on-insulator substrates having selectively formed strained and relaxed device regions | Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2016-09-06 |
| 9437502 | Method to form stacked germanium nanowires and stacked III-V nanowires | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-09-06 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Ajey Poovannummoottil Jacob, Bruce B. Doris, Kangguo Cheng, Kern Rim | 2016-08-30 |
| 9431265 | Fin cut for tight fin pitch by two different sit hard mask materials on fin | Kangguo Cheng, Alexander Reznicek, Tenko Yamashita | 2016-08-30 |
| 9431266 | Double patterning method | Kangguo Cheng, Bruce B. Doris, Ying Zhang | 2016-08-30 |
| 9431296 | Structure and method to form liner silicide with improved contact resistance and reliablity | Veeraraghavan S. Basker, Kangguo Cheng | 2016-08-30 |
| 9425080 | Non-volatile memory device employing semiconductor nanoparticles | Kangguo Cheng, Robert H. Dennard, Hemanth Jagannathan, Tak H. Ning, Ghavam G. Shahidi | 2016-08-23 |
| 9425319 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2016-08-23 |
| 9419074 | Non-planar semiconductor device with aspect ratio trapping | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2016-08-16 |
| 9419078 | Floating body memory with asymmetric channel | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2016-08-16 |
| 9418841 | Type III-V and type IV semiconductor device formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2016-08-16 |
| 9412740 | Integrated circuit product with a gate height registration structure | Ruilong Xie, Michael Wedlake, Xiuyu Cai, Kangguo Cheng | 2016-08-09 |
| 9412822 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ajey Poovannummoottil Jacob, Witold P. Maszara | 2016-08-09 |