Issued Patents All Time
Showing 576–600 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8981493 | FinFET and method of fabrication | Kangguo Cheng, Thomas N. Adam, Alexander Reznicek | 2015-03-17 |
| 8975697 | Integrated circuit having MOSFET with embedded stressor and method to fabricate same | Kangguo Cheng, Pouya Hashemi, Alexander Reznicek | 2015-03-10 |
| 8975125 | Formation of bulk SiGe fin with dielectric isolation by anodization | Thomas N. Adam, Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-03-10 |
| 8969966 | Defective P-N junction for backgated fully depleted silicon on insulator MOSFET | Kangguo Cheng, Bruce B. Doris, Laurent Grenouillet, Yannick Le Tiec, Qing Liu +1 more | 2015-03-03 |
| 8969938 | Method and structure for forming on-chip high quality capacitors with ETSOI transistors | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2015-03-03 |
| 8969934 | Gate-all-around nanowire MOSFET and method of formation | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2015-03-03 |
| 8969155 | Fin structure with varying isolation thickness | Kangguo Cheng, Bruce B. Doris, Kern Rim | 2015-03-03 |
| 8962412 | Integrated circuit having raised source drains devices with reduced silicide contact resistance and methods to fabricate same | Kangguo Cheng, Bruce B. Doris, Pranita Kerber, Christian Lavoie | 2015-02-24 |
| 8963259 | Device isolation in finFET CMOS | Ajey Poovannummoottil Jacob, Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng +1 more | 2015-02-24 |
| 8963248 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Pranita Kerber, Alexander Reznicek | 2015-02-24 |
| 8962434 | Field effect transistors with varying threshold voltages | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek, Thomas N. Adam | 2015-02-24 |
| 8956932 | U-shaped semiconductor structure | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2015-02-17 |
| 8956938 | Epitaxial semiconductor resistor with semiconductor structures on same substrate | Kangguo Cheng, Alexander Reznicek, Thomas N. Adam | 2015-02-17 |
| 8951870 | Forming strained and relaxed silicon and silicon germanium fins on the same wafer | Veeraraghavan S. Basker, Bruce B. Doris, Tenko Yamashita, Chun-Chen Yeh | 2015-02-10 |
| 8946793 | Integrated circuits having replacement gate structures and methods for fabricating the same | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2015-02-03 |
| 8946792 | Dummy fin formation by gas cluster ion beam | Kangguo Cheng, Balasubramanian S. Haran, Shom Ponoth, Theodorus E. Standaert, Tenko Yamashita | 2015-02-03 |
| 8946063 | Semiconductor device having SSOI substrate with relaxed tensile stress | Veeraraghavan S. Basker, Pranita Kerber, Alexander Reznicek | 2015-02-03 |
| 8946010 | Three dimensional FET devices having different device widths | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2015-02-03 |
| 8946007 | Inverted thin channel mosfet with self-aligned expanded source/drain | Bruce B. Doris, Kangguo Cheng, Douglas C. La Tulipe, Jr. | 2015-02-03 |
| 8941156 | Self-aligned dielectric isolation for FinFET devices | Marc A. Bergendahl, Kangguo Cheng, David V. Horak, Shom Ponoth, Theodorus E. Standaert +4 more | 2015-01-27 |
| 8940580 | Textured multi-junction solar cell and fabrication method | Bahman Hekmatshoartabari, Ghavam G. Shahidi, Davood Shahrjerdi | 2015-01-27 |
| 8933515 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier +2 more | 2015-01-13 |
| 8928096 | Buried-channel field-effect transistors | Kangguo Cheng, Pranita Kulkarni, Tak H. Ning | 2015-01-06 |
| 8927363 | Integrating channel SiGe into pFET structures | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2015-01-06 |
| 8921191 | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2014-12-30 |