Issued Patents All Time
Showing 626–650 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8860138 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-14 |
| 8859348 | Strained silicon and strained silicon germanium on insulator | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Devendra K. Sadana | 2014-10-14 |
| 8859302 | Structure and method for adjusting threshold voltage of the array of transistors | Jin Cai, Kangguo Cheng, Robert H. Dennard, Tak H. Ning | 2014-10-14 |
| 8853038 | Raised source/drain structure for enhanced strain coupling from stress liner | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2014-10-07 |
| 8853040 | Strained thin body CMOS device having vertically raised source/drain stressors with single spacer | Kangguo Cheng, Bruce B. Doris, Pranita Kerber, Ghavam G. Shahidi | 2014-10-07 |
| 8853750 | FinFET with enhanced embedded stressor | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2014-10-07 |
| 8841189 | Transistor having all-around source/drain metal contact channel stressor and method to fabricate same | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi, Alexander Reznicek | 2014-09-23 |
| 8841185 | High density bulk fin capacitor | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2014-09-23 |
| 8841711 | Methods of increasing space for contact elements by using a sacrificial liner and the resulting device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2014-09-23 |
| 8841188 | Bulk finFET with controlled fin height and high-K liner | Alexander Reznicek, Thomas N. Adam, Kangguo Cheng | 2014-09-23 |
| 8835262 | Methods of forming bulk FinFET devices by performing a recessing process on liner materials to define different fin heights and FinFET devices with such recessed liner materials | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2014-09-16 |
| 8835330 | Integrated circuit including DRAM and SRAM/logic | Kangguo Chen, Bruce B. Doris, Terence B. Hook, Pranita Kulkarni | 2014-09-16 |
| 8835900 | Highly scaled ETSOI floating body memory and memory circuit | Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2014-09-16 |
| 8828831 | Epitaxial replacement of a raised source/drain | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2014-09-09 |
| 8822320 | Dense finFET SRAM | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2014-09-02 |
| 8816436 | Method and structure for forming fin resistors | Kangguo Cheng, Thomas N. Adam, Alexander Reznicek | 2014-08-26 |
| 8815742 | Methods of forming bulk FinFET semiconductor devices by performing a liner recessing process to define fin heights and FinFET devices with such a recessed liner | Xiuyu Cai, Ruilong Xie, Kangguo Cheng | 2014-08-26 |
| 8815694 | Inducing channel stress in semiconductor-on-insulator devices by base substrate oxidation | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Pranita Kerber | 2014-08-26 |
| 8809920 | Prevention of fin erosion for semiconductor devices | Thomas N. Adam, Kangguo Cheng, Shom Ponoth, Alexander Reznicek, Raghavasimhan Sreenivasan +2 more | 2014-08-19 |
| 8809164 | Method of large-area circuit layout recognition | Stephen W. Bedell, Bahman Hekmatshoartabari, John A. Ott, Ghavam G. Shahidi, Davood Shahrjerdi | 2014-08-19 |
| 8803233 | Junctionless transistor | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Tak H. Ning | 2014-08-12 |
| 8802513 | Fin field effect transistors having a nitride containing spacer to reduce lateral growth of epitaxially deposited semiconductor materials | Alexander Reznicek, Thomas N. Adam, Kangguo Cheng, Paul C. Jamison | 2014-08-12 |
| 8796093 | Doping of FinFET structures | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2014-08-05 |
| 8785273 | FinFET non-volatile memory and method of fabrication | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2014-07-22 |
| 8772143 | Field effect transistor devices with dopant free channels and back gates | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2014-07-08 |