Issued Patents All Time
Showing 676–700 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8652932 | Semiconductor devices having fin structures, and methods of forming semiconductor devices having fin structures | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2014-02-18 |
| 8653596 | Integrated circuit including DRAM and SRAM/logic | Kangguo Cheng, Bruce B. Doris, Terence B. Hook, Pranita Kulkarni | 2014-02-18 |
| 8653599 | Strained SiGe nanowire having (111)-oriented sidewalls | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek, Thomas N. Adam | 2014-02-18 |
| 8652888 | SOI device with DTI and STI | Kangguo Cheng, Bruce B. Doris, Pranita Kerber | 2014-02-18 |
| 8647936 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Pranita Kerber | 2014-02-11 |
| 8648388 | High performance multi-finger strained silicon germanium channel PFET and method of fabrication | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2014-02-11 |
| 8647939 | Non-relaxed embedded stressors with solid source extension regions in CMOS devices | Kangguo Cheng, Bruce B. Doris, Pranita Kerber, Douglas C. La Tulipe, Jr. | 2014-02-11 |
| 8633085 | Dual-depth self-aligned isolation structure for a back gate electrode | Kangguo Cheng, Balasubramanian S. Haran, Ghavam G. Shahidi | 2014-01-21 |
| 8629502 | MOSFET with recessed channel film and abrupt junctions | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2014-01-14 |
| 8629504 | Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same | Bruce B. Doris, Kangguo Cheng, Ghavam G. Shahidi | 2014-01-14 |
| 8618554 | Method to reduce ground-plane poisoning of extremely-thin SOI (ETSOI) layer with thin buried oxide | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-31 |
| 8617968 | Strained silicon and strained silicon germanium on insulator metal oxide semiconductor field effect transistors (MOSFETs) | Kangguo Cheng, Bruce B. Doris, Pouya Hashemi | 2013-12-31 |
| 8617956 | Method and structure for forming high-K/metal gate extremely thin semiconductor on insulator device | Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni | 2013-12-31 |
| 8617937 | Forming narrow fins for finFET devices using asymmetrically spaced mandrels | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2013-12-31 |
| 8610233 | Hybrid MOSFET structure having drain side schottky junction | Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-17 |
| 8598663 | Semiconductor structure having NFET and PFET formed in SOI substrate with underlapped extensions | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Pranita Kulkarni, Ghavam G. Shahidi | 2013-12-03 |
| 8592323 | Method of large-area circuit layout recognition | Stephen W. Bedell, Bahman Hekmatshoartabari, John A. Ott, Ghavam G. Shahidi, Davood Shahrjerdi | 2013-11-26 |
| 8592916 | Selectively raised source/drain transistor | Thomas N. Adam, Kangguo Cheng, Alexander Reznicek | 2013-11-26 |
| 8592270 | Non-relaxed embedded stressors with solid source extension regions in CMOS devices | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Douglas C. La Tulipe, Jr. | 2013-11-26 |
| 8587068 | SRAM with hybrid FinFET and planar transistors | Kangguo Cheng, Wilfried E. Haensch, Pranita Kulkarni | 2013-11-19 |
| 8587086 | Self-aligned dual depth isolation and method of fabrication | Kangguo Cheng, Robert H. Dennard, Bruce B. Doris, Ghavam G. Shahidi | 2013-11-19 |
| 8586439 | Inversion mode varactor | Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni | 2013-11-19 |
| 8580634 | Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed prior to source/drain formation | Ruilong Xie, Xiuyu Cai, Kangguo Cheng | 2013-11-12 |
| 8575698 | MOSFET with thin semiconductor channel and embedded stressor with enhanced junction isolation | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-11-05 |
| 8574970 | Method of forming an extremely thin semiconductor insulator (ETSOI) FET having a stair-shaped raised source/drain | Kangguo Cheng, Bruce B. Doris, Ghavam G. Shahidi | 2013-11-05 |