Issued Patents All Time
Showing 726–750 of 757 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8445971 | Field effect transistor device with raised active regions | Kangguo Cheng, Bruce B. Doris, Alexander Reznicek | 2013-05-21 |
| 8445345 | CMOS structure having multiple threshold voltage devices | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-05-21 |
| 8435846 | Semiconductor devices with raised extensions | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Pranita Kulkarni | 2013-05-07 |
| 8435845 | Junction field effect transistor with an epitaxially grown gate structure | Tak H. Ning, Kangguo Cheng, Pranita Kulkarni | 2013-05-07 |
| 8421521 | Chemical detection with MOSFET sensor | Arjang Hassibi, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2013-04-16 |
| 8421156 | FET with self-aligned back gate | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-04-16 |
| 8421159 | Raised source/drain field effect transistor | Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni | 2013-04-16 |
| 8415743 | ETSOI CMOS with back gates | Jin Cai, Robert H. Dennard | 2013-04-09 |
| 8404540 | Device and method of reducing junction leakage | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2013-03-26 |
| 8399957 | Dual-depth self-aligned isolation structure for a back gate electrode | Kangguo Cheng, Balasubramanian S. Haran, Ghavam G. Shahidi | 2013-03-19 |
| 8399938 | Stressed Fin-FET devices with low contact resistance | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2013-03-19 |
| 8394710 | Semiconductor devices fabricated by doped material layer as dopant source | Kangguo Cheng, Bruce B. Doris, Balasubramanian S. Haran, Ghavam G. Shahidi | 2013-03-12 |
| 8383474 | Thin channel device and fabrication method with a reverse embedded stressor | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2013-02-26 |
| 8377759 | Controlled fin-merging for fin type FET devices | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-02-19 |
| 8368143 | Strained thin body semiconductor-on-insulator substrate and device | Stephen W. Bedell, Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni | 2013-02-05 |
| 8362560 | Field effects transistor with asymmetric abrupt junction implant | Pranita Kulkarni, Kangguo Cheng, Bruce B. Doris | 2013-01-29 |
| 8354876 | Chemical detection with MOSFET sensor | Arjang Hassibi, Bahman Hekmatshoartabari, Davood Shahrjerdi | 2013-01-15 |
| 8343819 | Extremely thin semiconductor-on-insulator (ETSOI) integrated circuit with on-chip resistors and method of forming the same | Bruce B. Doris, Kangguo Cheng, Ghavam G. Shahidi | 2013-01-01 |
| 8338260 | Raised source/drain structure for enhanced strain coupling from stress liner | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2012-12-25 |
| 8318568 | Tunnel field effect transistor | Bruce B. Doris, Kangguo Cheng, Wilfried E. Haensch, Isaac Lauer, Ghavam G. Shahidi | 2012-11-27 |
| 8318574 | SOI trench DRAM structure with backside strap | Bruce B. Doris, Kangguo Cheng, Pranita Kulkarni, Ghavam G. Shahidi | 2012-11-27 |
| 8309447 | Method for integrating multiple threshold voltage devices for CMOS | Kangguo Cheng, Bruce B. Doris, Lisa F. Edge, Balasubramanian S. Haran, Hemanth Jagannathan +1 more | 2012-11-13 |
| 8293615 | Self-aligned dual depth isolation and method of fabrication | Kangguo Cheng, Robert H. Dennard, Bruce B. Doris, Ghavam G. Shahidi | 2012-10-23 |
| 8288218 | Device structure, layout and fabrication method for uniaxially strained transistors | Stephen W. Bedell, Huiming Bu, Kangguo Cheng, Bruce B. Doris, Johnathan E. Faltermeier +2 more | 2012-10-16 |
| 8278175 | Compressively stressed FET device structures | Kangguo Cheng, Bruce B. Doris, Pranita Kulkarni, Ghavam G. Shahidi | 2012-10-02 |