Issued Patents All Time
Showing 76–90 of 90 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7556996 | Field effect transistor comprising a stressed channel region and method of forming the same | Christoph Schwan, Joe Bloomquist, Manfred Horstmann | 2009-07-07 |
| 7550396 | Method for reducing resist poisoning during patterning of silicon nitride layers in a semiconductor device | Volker Grimm, Sven Mueller, Matthias Lehr, Ralf Richter, Jochen Klais +4 more | 2009-06-23 |
| 7528059 | Method for reducing polish-induced damage in a contact structure by forming a capping layer | Sandra Bau, Johannes Groschopf | 2009-05-05 |
| 7517816 | Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress | Matthias Schaller, Massud Aminpur | 2009-04-14 |
| 7491555 | Method and semiconductor structure for monitoring the fabrication of interconnect structures and contacts in a semiconductor device | Matthias Lehr, Holger Schuehrer | 2009-02-17 |
| 7482219 | Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer | Carsten Peters, Matthias Schaller, Heike Salz | 2009-01-27 |
| 7462563 | Method of forming an etch indicator layer for reducing etch non-uniformities | Frank Feustel, Thomas Werner | 2008-12-09 |
| 7442638 | Method for forming a tungsten interconnect structure with enhanced sidewall coverage of the barrier layer | Katja Huy, Volker Kahlert | 2008-10-28 |
| 7396718 | Technique for creating different mechanical strain in different channel regions by forming an etch stop layer stack having differently modified intrinsic stress | Matthias Schaller, Joerg Hohage, Holger Schuehrer | 2008-07-08 |
| 7381602 | Method of forming a field effect transistor comprising a stressed channel region | Joerg Hohage, Hartmut Ruelke | 2008-06-03 |
| 7341903 | Method of forming a field effect transistor having a stressed channel region | Joerg Hohage, Hartmut Ruelke | 2008-03-11 |
| 7314824 | Nitrogen-free ARC/capping layer and method of manufacturing the same | Sven Muehle, Hartmut Ruelke | 2008-01-01 |
| 7314793 | Technique for controlling mechanical stress in a channel region by spacer removal | Matthias Schaller, Massud Aminpur, Martin Mazur, Roberto Klingler | 2008-01-01 |
| 7279415 | Method for forming a metallization layer stack to reduce the roughness of metal lines | Matthias Schaller | 2007-10-09 |
| 7259091 | Technique for forming a passivation layer prior to depositing a barrier layer in a copper metallization layer | Holger Schuehrer, Carsten Hartig, Christin Bartsch | 2007-08-21 |