Issued Patents All Time
Showing 126–150 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8390127 | Contact trenches for enhancing stress transfer in closely spaced transistors | Andy Wei, Heike Salz | 2013-03-05 |
| 8377761 | SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device | Andreas Gehring, Andy Wei | 2013-02-19 |
| 8357604 | Work function adjustment in high-k gate stacks for devices of different threshold voltage | Sven Beyer, Thilo Scheiper | 2013-01-22 |
| 8338894 | Increased depth of drain and source regions in complementary transistors by forming a deep drain and source region prior to a cavity etch | Uwe Griebenow, Sven Beyer | 2012-12-25 |
| 8338885 | Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes | Thomas Feudel, Ralf Illgen | 2012-12-25 |
| 8338274 | Transistor device comprising an embedded semiconductor alloy having an asymmetric configuration | Stephan Kronholz, Vassilios Papageorgiou, Gunda Beernink | 2012-12-25 |
| 8334569 | Transistor with embedded Si/Ge material having enhanced across-substrate uniformity | Robert Neil Mulfinger, Andy Wei, Casey Scott | 2012-12-18 |
| 8329531 | Strain memorization in strained SOI substrates of semiconductor devices | Sven Beyer, Uwe Griebenow, Thilo Scheiper | 2012-12-11 |
| 8329551 | Semiconductor device substrate with embedded stress region, and related fabrication methods | Stefan Flachowsky, Thilo Scheiper | 2012-12-11 |
| 8324041 | Complementary stress liner to improve DGO/AVT devices and poly and diffusion resistors | Stefan Flachowsky, Thilo Scheiper | 2012-12-04 |
| 8318564 | Performance enhancement in transistors comprising high-k metal gate stack by an early extension implantation | Thilo Scheiper, Sven Beyer, Uwe Griebenow | 2012-11-27 |
| 8278174 | In situ formed drain and source regions including a strain-inducing alloy and a graded dopant profile | Vassilios Papageorgiou, Uwe Griebenow | 2012-10-02 |
| 8274120 | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | Andy Wei, Thorsten Kammler, Manfred Horstmann, Peter Javorka, Joe Bloomquist | 2012-09-25 |
| 8247275 | Strain engineering in three-dimensional transistors based on globally strained semiconductor base layers | Sven Beyer, Uwe Griebenow | 2012-08-21 |
| 8198633 | Stress transfer enhancement in transistors by a late gate re-crystallization | Uwe Griebenow | 2012-06-12 |
| 8198152 | Transistors comprising high-k metal gate electrode structures and adapted channel semiconductor materials | Sven Beyer, Thilo Scheiper, Uwe Griebenow | 2012-06-12 |
| 8183101 | Multiple gate transistor having fins with a length defined by the gate electrode | Robert Neil Mulfinger, Andy Wei, Andrew Waite | 2012-05-22 |
| 8183100 | Transistor with embedded SI/GE material having enhanced across-substrate uniformity | Robert Neil Mulfinger, Andy Wei, Casey Scott | 2012-05-22 |
| 8158482 | Asymmetric transistor devices formed by asymmetric spacers and tilted implantation | Uwe Griebenow, Maciej Wiatr | 2012-04-17 |
| 8154084 | Performance enhancement in PMOS and NMOS transistors on the basis of silicon/carbon material | Vassilios Papageorgiou, Belinda Hannon | 2012-04-10 |
| 8143133 | Technique for enhancing dopant profile and channel conductivity by millisecond anneal processes | Thomas Feudel, Ralf Illgen | 2012-03-27 |
| 8143132 | Transistor including a high-K metal gate electrode structure formed on the basis of a simplified spacer regime | Sven Beyer, Thilo Scheiper | 2012-03-27 |
| 8138050 | Transistor device comprising an asymmetric embedded semiconductor alloy | Vassilios Papageorgiou, Robert Neil Mulfinger, Casey Scott | 2012-03-20 |
| 8062952 | Strain transformation in biaxially strained SOI substrates for performance enhancement of P-channel and N-channel transistors | Stefan Flachowsky, Andy Wei | 2011-11-22 |
| 8039342 | Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal | Uwe Griebenow, Thilo Scheiper, Andy Wei | 2011-10-18 |