Issued Patents All Time
Showing 151–174 of 174 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8034669 | Drive current adjustment for transistors formed in the same active region by locally providing embedded strain-inducing semiconductor material in the active region | Uwe Griebenow | 2011-10-11 |
| 8030148 | Structured strained substrate for forming strained transistors with reduced thickness of active layer | Andy Wei, Sven Beyer | 2011-10-04 |
| 8026134 | Recessed drain and source areas in combination with advanced silicide formation in transistors | Uwe Griebenow, Andy Wei, Thilo Scheiper | 2011-09-27 |
| 8018260 | Compensation of degradation of performance of semiconductor devices by clock duty cycle adaptation | Vassilios Papageorgiou, Maciej Wiatr | 2011-09-13 |
| 8017504 | Transistor having a high-k metal gate stack and a compressively stressed channel | Uwe Griebenow, Kai Frohberg | 2011-09-13 |
| 7977225 | Reducing implant degradation in tilted implantations by shifting implantation masks | Andre Poock | 2011-07-12 |
| 7943442 | SOI device having a substrate diode with process tolerant configuration and method of forming the SOI device | Andreas Gehring, Andy Wei | 2011-05-17 |
| 7943462 | Transistor including a high-K metal gate electrode structure formed prior to drain/source regions on the basis of a sacrificial carbon spacer | Sven Beyer, Thilo Scheiper, Markus Lenski | 2011-05-17 |
| 7863171 | SOI transistor having a reduced body potential and a method of forming the same | Andy Wei, Joe Bloomquist, Manfred Horstmann | 2011-01-04 |
| 7855118 | Drive current increase in transistors by asymmetric amorphization implantation | Uwe Griebenow, Vassilios Papageorgiou | 2010-12-21 |
| 7829421 | SOI transistor having an embedded strain layer and a reduced floating body effect and a method for forming the same | Andy Wei, Thorsten Kammler, Manfred Horstmann | 2010-11-09 |
| 7763505 | Method for reducing crystal defects in transistors with re-grown shallow junctions by appropriately selecting crystalline orientations | Andreas Gehring, Markus Lenski, Thorsten Kammler | 2010-07-27 |
| 7723195 | Method of forming a field effect transistor | Andy Wei, Thorsten Kammler, Manfred Horstmann | 2010-05-25 |
| 7696052 | Technique for providing stress sources in transistors in close proximity to a channel region by recessing drain and source regions | Andy Wei, Thorsten Kammler, Manfred Horstmann, Peter Javorka, Joe Bloomquist | 2010-04-13 |
| 7659213 | Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same | Andy Wei, Thorsten Kammler, Manfred Horstmann | 2010-02-09 |
| 7608499 | Semiconductor structure comprising field effect transistors with stressed channel regions and method of forming the same | Karla Romero, Sven Beyer, Rolf Stephan | 2009-10-27 |
| 7586153 | Technique for forming recessed strained drain/source regions in NMOS and PMOS transistors | Andy Wei, Thorsten Kammler, Michael Raab | 2009-09-08 |
| 7579262 | Different embedded strain layers in PMOS and NMOS transistors and a method of forming the same | Andy Wei, Manfred Horstmann, Thorsten Kammler | 2009-08-25 |
| 7510926 | Technique for providing stress sources in MOS transistors in close proximity to a channel region | Andy Wei, Thorsten Kammler, Manfred Horstmann | 2009-03-31 |
| 7402497 | Transistor device having an increased threshold stability without drive current degradation | Andy Wei, Thorsten Kammler, Manfred Horstmann | 2008-07-22 |
| 7399663 | Embedded strain layer in thin SOI transistors and a method of forming the same | Andy Wei, Manfred Horstmann, Thorsten Kammler | 2008-07-15 |
| 7354836 | Technique for forming a strained transistor by a late amorphization and disposable spacers | Andy Wei, Gert Burbach, Peter Javorka | 2008-04-08 |
| 7344984 | Technique for enhancing stress transfer into channel regions of NMOS and PMOS transistors | Andy Wei, Markus Lenski, Peter Javorka | 2008-03-18 |
| 7329571 | Technique for providing multiple stress sources in NMOS and PMOS transistors | Andy Wei, Manfred Horstmann, Thorsten Kammler | 2008-02-12 |