Issued Patents All Time
Showing 301–325 of 365 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6426558 | Metallurgy for semiconductor devices | Jonathan D. Chapple-Sokol, Paul M. Feeney, Robert M. Geffken, Mark P. Murray, Anthony K. Stamper | 2002-07-30 |
| 6426175 | Fabrication of a high density long channel DRAM gate with or without a grooved gate | Toshiharu Furukawa, Mark C. Hakey, Stevn J. Holmes, Paul A. Rabidoux | 2002-07-30 |
| 6420748 | Borderless bitline and wordline DRAM structure | Mark C. Hakey, William H. Ma, Wendell P. Noble | 2002-07-16 |
| 6391426 | High capacitance storage node structures | Mark C. Hakey, Steven J. Holmes, William H. Ma | 2002-05-21 |
| 6387783 | Methods of T-gate fabrication using a hybrid resist | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux | 2002-05-14 |
| 6376873 | Vertical DRAM cell with robust gate-to-storage node isolation | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Thomas S. Kanarsky, Jeffrey J. Welser | 2002-04-23 |
| 6373091 | Vertical DRAM cell with TFT over trench capacitor | Rick L. Mohler, Gorden Seth Starkey, Jr. | 2002-04-16 |
| 6372412 | Method of producing an integrated circuit chip using frequency doubling hybrid photoresist and apparatus formed thereby | Mark C. Hakey, Steven J. Holmes, Ahmad D. Katnani, Niranjan M. Patel, Paul A. Rabidoux | 2002-04-16 |
| 6358813 | Method for increasing the capacitance of a semiconductor capacitors | Steven J. Holmes, Charles T. Black, David J. Frank, Toshiharu Furukawa, Mark C. Hakey +3 more | 2002-03-19 |
| 6344416 | Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes | 2002-02-05 |
| 6342722 | Integrated circuit having air gaps between dielectric and conducting lines | Michael D. Armacost, Peter D. Hoh, Richard S. Wise | 2002-01-29 |
| 6333533 | Trench storage DRAM cell with vertical three-sided transfer device | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Thomas S. Kanarsky, Jack A. Mandelman | 2001-12-25 |
| 6333229 | Method for manufacturing a field effect transitor (FET) having mis-aligned-gate structure | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes | 2001-12-25 |
| 6333245 | Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma, Donald W. Rakowski | 2001-12-25 |
| 6326275 | DRAM cell with vertical CMOS transistor | Jay G. Harrington, Kevin M. Houlihan, Chung H. Lam, Rebecca D. Mih | 2001-12-04 |
| 6323082 | Process for making a DRAM cell with three-sided gate transfer | Toshiharu Furukawa, Steven J. Holmes, Mark C. Hakey, Jack A. Mandelman | 2001-11-27 |
| 6319759 | Method for making oxide | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma | 2001-11-20 |
| 6313492 | Integrated circuit chip produced by using frequency doubling hybrid photoresist | Mark C. Hakey, Steven J. Holmes, Ahmad D. Katnani, Niranjan M. Patel, Paul A. Rabidoux | 2001-11-06 |
| 6303272 | Process for self-alignment of sub-critical contacts to wiring | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux | 2001-10-16 |
| 6297166 | Method for modifying nested to isolated offsets | Bernie F. Duncan | 2001-10-02 |
| 6282115 | Multi-level DRAM trench store utilizing two capacitors and two plates | Toshiharu Furukawa, Howard L. Kalter | 2001-08-28 |
| 6277543 | Method for forming features using frequency doubling hybrid resist and device formed thereby | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux | 2001-08-21 |
| 6271555 | Borderless wordline for DRAM cell | Mark C. Hakey, Steven J. Holmes, Wendell P. Noble | 2001-08-07 |
| 6261933 | Process for building borderless bitline, wordline amd DRAM structure | Mark C. Hakey, William H. Ma, Wendell P. Noble | 2001-07-17 |
| 6258661 | Formation of out-diffused bitline by laser anneal | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Thomas S. Kanarsky | 2001-07-10 |