Issued Patents All Time
Showing 251–275 of 365 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7071047 | Method of forming buried isolation regions in semiconductor substrates and semiconductor devices with buried isolation regions | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2006-07-04 |
| 7041600 | Methods of planarization | Omer H. Dokumaci, Bruce B. Doris, Fen F. Jamin | 2006-05-09 |
| 7038299 | Selective synthesis of semiconducting carbon nanotubes | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Peter H. Mitchell +1 more | 2006-05-02 |
| 7026259 | Liquid-filled balloons for immersion lithography | Mark C. Hakey, Charles W. Koburger, III, Peter H. Mitchell | 2006-04-11 |
| 6998204 | Alternating phase mask built by additive film deposition | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Peter H. Mitchell +1 more | 2006-02-14 |
| 6995051 | Irradiation assisted reactive ion etching | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes | 2006-02-07 |
| 6989323 | Method for forming narrow gate structures on sidewalls of a lithographically defined sacrificial material | Bruce B. Doris, Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2006-01-24 |
| 6970372 | Dual gated finfet gain cell | Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Mark E. Masters, Peter H. Mitchell | 2005-11-29 |
| 6963132 | Integrated semiconductor device having co-planar device surfaces | Mark C. Hakey, Steven J. Holmes, Harold G. Linde, Edmund J. Sprogis | 2005-11-08 |
| 6960510 | Method of making sub-lithographic features | Sadanand V. Deshpande, Toshiharu Furukawa, Wesley C. Natzle, Akihisa Sekiguchi, Len Yuan Tsou +1 more | 2005-11-01 |
| 6940134 | Semiconductor with contact contacting diffusion adjacent gate electrode | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes | 2005-09-06 |
| 6939791 | Contact capping local interconnect | Robert M. Geffken, Anthony K. Stamper | 2005-09-06 |
| 6924200 | Methods using disposable and permanent films for diffusion and implantation doping | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma, Patricia Marmillion +1 more | 2005-08-02 |
| 6919277 | Deliberate semiconductor film variation to compensate for radial processing differences, determine optimal device characteristics, or produce small productions | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes | 2005-07-19 |
| 6890828 | Method for supporting a bond pad in a multilevel interconnect structure and support structure formed thereby | Charles W. Koburger, III, Peter H. Mitchell, Larry Nesbit | 2005-05-10 |
| 6891226 | Dual gate logic device | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma | 2005-05-10 |
| 6891235 | FET with T-shaped gate | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Edward J. Nowak | 2005-05-10 |
| 6884734 | Vapor phase etch trim structure with top etch blocking layer | Frederick Buehrer, Derek Chen, William Chu, Scott W. Crowder, Sadanand V. Deshpande +4 more | 2005-04-26 |
| 6875685 | Method of forming gas dielectric with support structure | Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Peter H. Mitchell, Larry Nesbit +1 more | 2005-04-05 |
| 6875703 | Method for forming quadruple density sidewall image transfer (SIT) structures | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Peter H. Mitchell | 2005-04-05 |
| 6867143 | Method for etching a semiconductor substrate using germanium hard mask | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma | 2005-03-15 |
| 6864041 | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching | Jeffrey J. Brown, Sadanand V. Deshpande, Maheswaran Surendra, Len Yuan Tsou, Qingyun Yang +2 more | 2005-03-08 |
| 6819841 | Self-aligned optical waveguide to optical fiber connection system | Roland Germann, Akihisa Sekiguchi | 2004-11-16 |
| 6815737 | Method for selective trimming of gate structures and apparatus formed thereby | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux | 2004-11-09 |
| 6797641 | Gate oxide stabilization by means of germanium components in gate conductor | Steven J. Holmes, Mark C. Hakey, Toshiharu Furukawa | 2004-09-28 |