Issued Patents All Time
Showing 201–225 of 365 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7393779 | Shrinking contact apertures through LPD oxide | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Larry Nesbit | 2008-07-01 |
| 7387974 | Methods for providing gate conductors on semiconductors and semiconductors formed thereby | Steven J. Holmes, Toshiharu Furukawa, Charles W. Koburger, III, Mark C. Hakey | 2008-06-17 |
| 7385839 | Memory devices using carbon nanotube (CNT) technologies | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-06-10 |
| 7385673 | Immersion lithography with equalized pressure on at least projection optics component and wafer | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Peter H. Mitchell | 2008-06-10 |
| 7385275 | Shallow trench isolation method for shielding trapped charge in a semiconductor device | Ethan H. Cannon, Shunhua T. Chang, Toshiharu Furukawa, Charles W. Koburger, III | 2008-06-10 |
| 7381610 | Semiconductor transistors with contact holes close to gates | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, William R. Tonti | 2008-06-03 |
| 7381655 | Mandrel/trim alignment in SIT processing | Toshiharu Furukawa, Charles W. Koburger, III, Qiqing C. Ouyang | 2008-06-03 |
| 7378717 | Semiconductor optical sensors | Toshiharu Furukawa, Steven J. Holmes, Charles W. Koburger, III | 2008-05-27 |
| 7368712 | Y-shaped carbon nanotubes as AFM probe for analyzing substrates with angled topography | Carol Boye, Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-05-06 |
| 7362412 | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system | Steven J. Holmes, Mark C. Hakey, Toshiharu Furukawa | 2008-04-22 |
| 7358140 | Pattern density control using edge printing processes | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-04-15 |
| 7358120 | Silicon-on-insulator (SOI) read only memory (ROM) array and method of making a SOI ROM | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Jack A. Mandelman | 2008-04-15 |
| 7351648 | Methods for forming uniform lithographic features | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Chung H. Lam | 2008-04-01 |
| 7352030 | Semiconductor devices with buried isolation regions | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-04-01 |
| 7352607 | Non-volatile switching and memory devices using vertical nanotubes | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-04-01 |
| 7351666 | Layout and process to contact sub-lithographic structures | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Chung H. Lam | 2008-04-01 |
| 7348610 | Multiple layer and crystal plane orientation semiconductor substrate | Toshiharu Furukawa, Charles W. Koburger, III, Leathen Shi | 2008-03-25 |
| 7348634 | Shallow trench isolation formation | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-03-25 |
| 7345370 | Wiring patterns formed by selective metal plating | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III | 2008-03-18 |
| 7335930 | Borderless contact structures | Toshiharu Furukawa, Charles W. Koburger, III | 2008-02-26 |
| 7329613 | Structure and method for forming semiconductor wiring levels using atomic layer deposition | Toshiharu Furukawa, Steven J. Holmes, Charles W. Koburger, III | 2008-02-12 |
| 7329567 | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Peter H. Mitchell, Larry Nesbit | 2008-02-12 |
| 7282423 | Method of forming fet with T-shaped gate | Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Edward J. Nowak | 2007-10-16 |
| 7276768 | Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures | Toshiharu Furukawa, Robert J. Gauthier, Jr., Charles W. Koburger, III, Jack A. Mandelman, William R. Tonti | 2007-10-02 |
| 7273794 | Shallow trench isolation fill by liquid phase deposition of SiO2 | Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Peter H. Mitchell, Larry Nesbit | 2007-09-25 |