DH

David V. Horak

Globalfoundries: 20 patents #152 of 4,424Top 4%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
FS Freeescale Semiconductor: 2 patents #1,335 of 3,767Top 40%
Samsung: 1 patents #49,284 of 75,807Top 70%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 South Burlington, VT: #1 of 1,136 inventorsTop 1%
🗺 Vermont: #5 of 4,968 inventorsTop 1%
Overall (All Time): #800 of 4,157,543Top 1%
365
Patents All Time

Issued Patents All Time

Showing 176–200 of 365 patents

Patent #TitleCo-InventorsDate
7601205 Carbon nanotubes as low voltage field emission sources for particle precipitators Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-10-13
7579272 Methods of forming low-k dielectric layers containing carbon nanostructures Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-08-25
7566613 Method of forming a dual gated FinFET gain cell Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Mark E. Masters, Peter H. Mitchell 2009-07-28
7560347 Methods for forming a wrap-around gate field effect transistor Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Peter H. Mitchell 2009-07-14
7557023 Implantation of gate regions in semiconductor device fabrication Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-07-07
7535016 Vertical carbon nanotube transistor integration Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Mark E. Masters, Peter H. Mitchell 2009-05-19
7528494 Accessible chip stack and process of manufacturing thereof Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-05-05
7525156 Shallow trench isolation fill by liquid phase deposition of SiO2 Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Peter H. Mitchell, Larry Nesbit 2009-04-28
7521735 Multiple layer and crystal plane orientation semiconductor substrate Toshiharu Furukawa, Charles W. Koburger, III, Leathen Shi 2009-04-21
7521808 Wiring paterns formed by selective metal plating Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-04-21
7517716 Method of forming optical sensor that includes three pairs of electrodes formed at different depths in a semiconductor substrate Toshiharu Furukawa, Steven J. Holmes, Charles W. Koburger, III 2009-04-14
7510939 Microelectronic structure by selective deposition Toshiharu Furukawa, Steven J. Holmes, Charles W. Koburger, III 2009-03-31
7505110 Micro-electro-mechanical valves and pumps Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-03-17
7504314 Method for fabricating oxygen-implanted silicon on insulation type semiconductor and semiconductor formed therefrom Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III, Larry Nesbit 2009-03-17
7492046 Electric fuses using CNTs (carbon nanotubes) Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-02-17
7491631 Method of doping a gate electrode of a field effect transistor Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-02-17
7491618 Methods and semiconductor structures for latch-up suppression using a conductive region Toshiharu Furukawa, Charles W. Koburger, III, Jack A. Mandelman, William R. Tonti 2009-02-17
7483285 Memory devices using carbon nanotube (CNT) technologies Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2009-01-27
7473633 Method for making integrated circuit chip having carbon nanotube composite interconnection vias Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Mark E. Masters, Peter H. Mitchell +1 more 2009-01-06
7459013 Chemical and particulate filters containing chemically modified carbon nanotube structures Steven J. Holmes, Mark C. Hakey, James G. Ryan 2008-12-02
7439144 CMOS gate structures fabricated by selective oxidation Bruce B. Doris, Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2008-10-21
7439081 Method for making integrated circuit chip utilizing oriented carbon nanotube conductive layers Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles Koburger III, Peter H. Mitchell 2008-10-21
7435653 Methods for forming a wrap-around gate field effect transistor Toshiharu Furukawa, Mark C. Hakey, Charles W. Koburger, III, Peter H. Mitchell 2008-10-14
7402194 Carbon nanotubes as low voltage field emission sources for particle precipitators Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Charles W. Koburger, III 2008-07-22
7397692 High performance single event upset hardened SRAM cell Ethan H. Cannon, Toshiharu Furukawa, Charles W. Koburger, III, Jack A. Mandelman 2008-07-08