DH

David V. Horak

Globalfoundries: 20 patents #152 of 4,424Top 4%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
FS Freeescale Semiconductor: 2 patents #1,335 of 3,767Top 40%
Samsung: 1 patents #49,284 of 75,807Top 70%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 South Burlington, VT: #1 of 1,136 inventorsTop 1%
🗺 Vermont: #5 of 4,968 inventorsTop 1%
Overall (All Time): #800 of 4,157,543Top 1%
365
Patents All Time

Issued Patents All Time

Showing 351–365 of 365 patents

Patent #TitleCo-InventorsDate
6100172 Method for forming a horizontal surface spacer and devices formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2000-08-08
6096598 Method for forming pillar memory cells and device formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2000-08-01
6090673 Device contact structure and method for fabricating same Archibald J. Allen, Toshiharu Furukawa, Edward F. O'Neil, Mark C. Hakey, Roger A. Verhelst 2000-07-18
6063658 Methods of making a trench storage DRAM cell including a step transfer device Toshiharu Furukawa, Steven J. Holmes, Mark C. Hakey, William H. Ma, Jack A. Mandelman 2000-05-16
6037194 Method for making a DRAM cell with grooved transfer device Gary B. Bronner, Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Jack A. Mandelman +1 more 2000-03-14
6017810 Process for fabricating field effect transistor with a self-aligned gate to device isolation Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2000-01-25
6007968 Method for forming features using frequency doubling hybrid resist and device formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 1999-12-28
5998835 High performance MOSFET device with raised source and drain Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma, Jack A. Mandelman 1999-12-07
5959325 Method for forming cornered images on a substrate and photomask formed thereby William J. Adair, Richard A. Ferguson, Mark C. Hakey, Steven J. Holmes, Robert K. Leidy +3 more 1999-09-28
5956597 Method for producing SOI & non-SOI circuits on a single wafer Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 1999-09-21
5953607 Buried strap for trench storage capacitors in dram trench cells Mark C. Hakey, Jack A. Mandelman, Wendell P. Noble 1999-09-14
5949700 Five square vertical dynamic random access memory cell Toshiharu Furukawa, Mark C. Hakey, William H. Ma, Jack A. Mandelman 1999-09-07
5945707 DRAM cell with grooved transfer device Gary B. Bronner, Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Jack A. Mandelman +1 more 1999-08-31
5831301 Trench storage dram cell including a step transfer device Toshiharu Furukawa, Steven J. Holmes, Mark C. Hakey, William H. Ma, Jack A. Mandelman 1998-11-03
5776660 Fabrication method for high-capacitance storage node structures Mark C. Hakey, Steven J. Holmes, William H. Ma 1998-07-07