DH

David V. Horak

Globalfoundries: 20 patents #152 of 4,424Top 4%
GP Globalfoundries Singapore Pte.: 5 patents #141 of 828Top 20%
FS Freeescale Semiconductor: 2 patents #1,335 of 3,767Top 40%
Samsung: 1 patents #49,284 of 75,807Top 70%
GU Globalfoundries U.S.: 1 patents #22 of 211Top 15%
📍 South Burlington, VT: #1 of 1,136 inventorsTop 1%
🗺 Vermont: #5 of 4,968 inventorsTop 1%
Overall (All Time): #800 of 4,157,543Top 1%
365
Patents All Time

Issued Patents All Time

Showing 326–350 of 365 patents

Patent #TitleCo-InventorsDate
6255158 Process of manufacturing a vertical dynamic random access memory device Toshiharu Furukawa, Ulrike Gruening, Jack A. Mandelman, Carl Radens, Thomas Rupp 2001-07-03
6245488 Method for forming features using frequency doubling hybrid resist and device formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2001-06-12
6228706 Vertical DRAM cell with TFT over trench capacitor Rick L. Mohler, Gorden Seth Starkey, Jr. 2001-05-08
6228705 Overlay process for fabricating a semiconductor device Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma 2001-05-08
6225158 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, Mark C. Hakey, William H. Ma, Jack A. Mandelman 2001-05-01
6221704 Process for fabricating short channel field effect transistor with a highly conductive gate Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, James S. Nakos, Paul A. Rabidoux 2001-04-24
6221680 Patterned recess formation using acid diffusion Mark C. Hakey, Steven J. Holmes, Toshiharu Furukawa 2001-04-24
6221562 Resist image reversal by means of spun-on-glass Diane C. Boyd, Toshiharu Furukawa, Steven J. Holmes, William H. Ma, Paul A. Rabidoux 2001-04-24
6210866 Method for forming features using self-trimming by selective etch and device formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2001-04-03
6207540 Method for manufacturing high performance MOSFET device with raised source and drain Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma, Jack A. Mandelman 2001-03-27
6207514 Method for forming borderless gate structures and apparatus formed thereby Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2001-03-27
6207493 Formation of out-diffused bitline by laser anneal Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Thomas S. Kanarsky 2001-03-27
6194268 Printing sublithographic images using a shadow mandrel and off-axis exposure Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2001-02-27
6190988 Method for a controlled bottle trench for a dram storage node Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, William H. Ma, James M. Never 2001-02-20
6184549 Trench storage dynamic random access memory cell with vertical transfer device Toshiharu Furukawa, Mark C. Hakey, William H. Ma, Jack A. Mandelman 2001-02-06
6184151 Method for forming cornered images on a substrate and photomask formed thereby William J. Adair, Richard A. Ferguson, Mark C. Hakey, Steven J. Holmes, Robert K. Leidy +3 more 2001-02-06
6184041 Fused hybrid resist shapes as a means of modulating hybrid resist space width Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2001-02-06
6175128 Process for building borderless bitline, wordline and DRAM structure and resulting structure Mark C. Hakey, William H. Ma, Wendell P. Noble 2001-01-16
6153902 Vertical DRAM cell with wordline self-aligned to storage trench Toshiharu Furukawa, Ulrike Gruening, Jack A. Mandelman, Carl Radens, Thomas Rupp 2000-11-28
6150256 Method for forming self-aligned features Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Paul A. Rabidoux 2000-11-21
6121651 Dram cell with three-sided-gate transfer device Toshiharu Furukawa, Steven J. Holmes, Mark C. Hakey, Jack A. Mandelman 2000-09-19
6121128 Method for making borderless wordline for DRAM cell Mark C. Hakey, Steven J. Holmes, Wendell P. Noble 2000-09-19
6114725 Structure for folded architecture pillar memory cell Toshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, Howard L. Kalter, Jack A. Mandelman +2 more 2000-09-05
6114082 Frequency doubling hybrid photoresist having negative and positive tone components and method of preparing the same Mark C. Hakey, Steven J. Holmes, Ahmad D. Katnani, Niranjan M. Patel, Paul A. Rabidoux 2000-09-05
6107133 Method for making a five square vertical DRAM cell Toshiharu Furukawa, Mark C. Hakey, William H. Ma, Jack A. Mandelman 2000-08-22