Issued Patents All Time
Showing 201–225 of 226 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9224865 | FinFET with insulator under channel | Murat Kerem Akarvardar, Jody A. Fronheiser | 2015-12-29 |
| 9224605 | Forming alternative material fins with reduced defect density by performing an implantation/anneal defect generation process | Yi Qi, Shurong Liang | 2015-12-29 |
| 9214553 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2015-12-15 |
| 9190411 | Retrograde doped layer for device isolation | Steven Bentley, Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng, Bruce B. Doris +2 more | 2015-11-17 |
| 9184263 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Xiuyu Cai, Daniel T. Pham, Mark V. Raymond, Christopher M. Prindle, Catherine B. Labelle +2 more | 2015-11-10 |
| 9184162 | FinFET integrated circuits and methods for their fabrication | Murat Kerem Akarvardar, Xiuyu Cai | 2015-11-10 |
| 9165837 | Method to form defect free replacement fins by H2 anneal | Jody A. Fronheiser, Murat Kerem Akarvardar, Steven Bentley | 2015-10-20 |
| 9147748 | Methods of forming replacement spacer structures on semiconductor devices | Ruilong Xie, Xiuyu Cai, Andreas Knorr, Christopher M. Prindle | 2015-09-29 |
| 9147730 | Methods of forming fins for FinFET semiconductor devices and selectively removing some of the fins by performing a cyclical fin cutting process | Ruilong Xie, Andreas Knorr, Michael Hargrove | 2015-09-29 |
| 9147616 | Methods of forming isolated fins for a FinFET semiconductor device with alternative channel materials | Murat Kerem Akarvardar | 2015-09-29 |
| 9123627 | Methods of forming alternative material fins with reduced defect density for a FinFET semiconductor device | Yi Qi, Shurong Liang | 2015-09-01 |
| 9117875 | Methods of forming isolated germanium-containing fins for a FinFET semiconductor device | Murat Kerem Akarvardar, Jody A. Fronheiser, Kangguo Cheng, Bruce B. Doris, Kern Rim | 2015-08-25 |
| 9093496 | Process for faciltiating fin isolation schemes | Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2015-07-28 |
| 9076842 | Fin pitch scaling and active layer isolation | Murat Kerem Akarvardar, Steven Bentley, Bartlomiej Jan Pawlak | 2015-07-07 |
| 9059042 | Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices | Ruilong Xie | 2015-06-16 |
| 9023705 | Methods of forming stressed multilayer FinFET devices with alternative channel materials | Abhijeet Paul, Min-hwa Chi | 2015-05-05 |
| 9006077 | Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs | Murat Kerem Akarvardar | 2015-04-14 |
| 8987094 | FinFET integrated circuits and methods for their fabrication | Murat Kerem Akarvardar, Xiuyu Cai | 2015-03-24 |
| 8963259 | Device isolation in finFET CMOS | Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng, Bruce B. Doris +1 more | 2015-02-24 |
| 8853019 | Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process | Jody A. Fronheiser, Jeremy A. Wahl, Kerem Akarvardar, Daniel T. Pham | 2014-10-07 |
| 8809947 | Integrated circuits and methods for fabricating integrated circuits with cladded non-planar transistor structures | Kerem Akarvardar | 2014-08-19 |
| 8716156 | Methods of forming fins for a FinFET semiconductor device using a mandrel oxidation process | Bartlomiej Jan Pawlak, Steven Bentley | 2014-05-06 |
| 8697454 | Methods of forming spin torque devices and structures formed thereby | Dmitri E. Nikonov, George I. Bourianoff | 2014-04-15 |
| 8673718 | Methods of forming FinFET devices with alternative channel materials | Witold P. Maszara, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar | 2014-03-18 |
| 8580642 | Methods of forming FinFET devices with alternative channel materials | Witold P. Maszara, Nicholas V. LiCausi, Jody A. Fronheiser, Kerem Akarvardar | 2013-11-12 |