Issued Patents All Time
Showing 151–175 of 226 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9633947 | Folded ballistic conductor interconnect line | — | 2017-04-25 |
| 9634123 | FinFET device including a dielectrically isolated silicon alloy fin | — | 2017-04-25 |
| 9627245 | Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device | Bruce B. Doris, Kangguo Cheng, Nicolas Loubet | 2017-04-18 |
| 9614058 | Methods of forming low defect replacement fins for a FinFET semiconductor device and the resulting devices | Jody A. Fronheiser, Witold P. Maszara, Kerem Akarvardar | 2017-04-04 |
| 9589849 | Methods of modulating strain in PFET and NFET FinFET semiconductor devices | Murat Kerem Akarvardar, Bruce B. Doris, Ali Khakifirooz | 2017-03-07 |
| 9590040 | Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials | Murat Kerem Akarvardar | 2017-03-07 |
| 9570244 | Solid-state supercapacitor | Bruce S. Dunn, Chi On Chui, Daniel Membreno, Leland Smith | 2017-02-14 |
| 9564447 | Methods for fabricating programmable devices and related structures | Suraj K. Patil, Min-hwa Chi | 2017-02-07 |
| 9564486 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more | 2017-02-07 |
| 9564367 | Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices | Witold P. Maszara, Kerem Akarvardar | 2017-02-07 |
| 9524908 | Methods of removing portions of fins by preforming a selectively etchable material in the substrate | Yi Qi | 2016-12-20 |
| 9508853 | Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in the channel region | Witold P. Maszara, Jody A. Fronheiser | 2016-11-29 |
| 9496354 | Semiconductor devices with dummy gate structures partially on isolation regions | Ruilong Xie, Xiuyu Cai, Andreas Knorr, Christopher M. Prindle | 2016-11-15 |
| 9484428 | Non-planar exciton transistor (BiSFET) and methods for making | — | 2016-11-01 |
| 9478663 | FinFET device including a uniform silicon alloy fin | Jody A. Fronheiser, Yi Qi, Sylvie Mignot | 2016-10-25 |
| 9466664 | Uniaxially-strained FD-SOI finFET | Pierre Morin, Maud Vinet, Laurent Grenouillet | 2016-10-11 |
| 9455199 | Methods of forming strained and relaxed germanium fins for PMOS and NMOS finFET devices, respectively | — | 2016-09-27 |
| 9455140 | Methods of forming doped epitaxial SiGe material on semiconductor devices | Jody A. Fronheiser, Murat Kerem Akarvardar | 2016-09-27 |
| 9431306 | Methods of forming fin isolation regions on FinFET semiconductor devices using an oxidation-blocking layer of material and by performing a fin-trimming process | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-08-30 |
| 9425289 | Methods of forming alternative channel materials on FinFET semiconductor devices | Murat Kerem Akarvardar | 2016-08-23 |
| 9425315 | FinFET semiconductor device with isolated fins made of alternative channel materials | Murat Kerem Akarvardar | 2016-08-23 |
| 9412822 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Kangguo Cheng, Ali Khakifirooz, Witold P. Maszara | 2016-08-09 |
| 9406803 | FinFET device including a uniform silicon alloy fin | Jody A. Fronheiser, Murat Kerem Akarvardar, Steven Bentley | 2016-08-02 |
| 9385233 | Bulk finFET with partial dielectric isolation featuring a punch-through stopping layer under the oxide | Murat Kerem Akarvardar | 2016-07-05 |
| 9373721 | Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices | Ruilong Xie, Michael Hargrove | 2016-06-21 |