Issued Patents All Time
Showing 176–200 of 226 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9368578 | Methods of forming substrates comprised of different semiconductor materials and the resulting device | Bartlomiej Jan Pawlak, Steven Bentley | 2016-06-14 |
| 9368591 | Transistors comprising doped region-gap-doped region structures and methods of fabrication | Steven Bentley, Chia-Yu Chen, Tenko Yamashita | 2016-06-14 |
| 9362277 | FinFET with multilayer fins for multi-value logic (MVL) applications and method of forming | Min-hwa Chi, Abhijeet Paul | 2016-06-07 |
| 9362405 | Channel cladding last process flow for forming a channel region on a FinFET device | Witold P. Maszara, Jody A. Fronheiser | 2016-06-07 |
| 9349658 | Methods of forming fin isolation regions on finFET semiconductor devices using an oxidation-blocking layer of material | Bruce B. Doris, Kangguo Cheng, Ali Khakifirooz, Kern Rim | 2016-05-24 |
| 9349730 | Fin transformation process and isolation structures facilitating different Fin isolation schemes | Kangguo Cheng, Bruce B. Doris, Nicolas Loubet, Prasanna Khare, Ramachandra Divakaruni | 2016-05-24 |
| 9349840 | Methods of forming stressed channel regions for a FinFET semiconductor device and the resulting device | Xiuyu Cai, Ruilong Xie, Witold P. Maszara, Kangguo Cheng, Ali Khakifirooz | 2016-05-24 |
| 9343300 | Methods of forming source/drain regions for a PMOS transistor device with a germanium-containing channel region | Michael Hargrove, Jody A. Fronheiser, Murat Kerem Akarvardar | 2016-05-17 |
| 9324790 | Self-aligned dual-height isolation for bulk FinFET | Murat Kerem Akarvardar, Steven Bentley, Kangguo Cheng, Bruce B. Doris, Jody A. Fronheiser +2 more | 2016-04-26 |
| 9318342 | Methods of removing fins for finfet semiconductor devices | Ruilong Xie, Andreas Knorr, Michael Hargrove | 2016-04-19 |
| 9318552 | Methods of forming conductive contact structures for a semiconductor device with a larger metal silicide contact area and the resulting devices | Ruilong Xie, William J. Taylor, Jr. | 2016-04-19 |
| 9312387 | Methods of forming FinFET devices with alternative channel materials | Murat Kerem Akarvardar, Michael Hargrove, Ruilong Xie | 2016-04-12 |
| 9305846 | Device isolation in FinFET CMOS | Murat Kerem Akarvardar, Steven Bentley, Toshiharu Nagumo, Kangguo Cheng, Bruce B. Doris +1 more | 2016-04-05 |
| 9293587 | Forming embedded source and drain regions to prevent bottom leakage in a dielectrically isolated fin field effect transistor (FinFET) device | Murat Kerem Akarvardar | 2016-03-22 |
| 9293324 | Methods of forming semiconductor devices including an electrically-decoupled fin | Steven Bentley | 2016-03-22 |
| 9287130 | Method for single fin cuts using selective ion implants | Xiuyu Cai, Ruilong Xie, Bruce B. Doris, Kangguo Cheng, Jason R. Cantone +7 more | 2016-03-15 |
| 9269628 | Methods of removing portions of at least one fin structure so as to form isolation regions when forming FinFET semiconductor devices | — | 2016-02-23 |
| 9263580 | Methods of forming isolated channel regions for a FinFET semiconductor device and the resulting device | Nicolas Loubet | 2016-02-16 |
| 9263587 | Fin device with blocking layer in channel region | Min-hwa Chi | 2016-02-16 |
| 9252208 | Uniaxially-strained FD-SOI finFET | Pierre Morin, Maud Vinet, Laurent Grenouillet | 2016-02-02 |
| 9245694 | Solid-state supercapacitor | Bruce S. Dunn, Chi On Chui, Daniel Membreno, Leland Smith | 2016-01-26 |
| 9245980 | Methods of forming substantially defect-free, fully-strained silicon-germanium fins for a FinFET semiconductor device | Murat Kerem Akarvardar, Jody A. Fronheiser | 2016-01-26 |
| 9240342 | Methods of forming replacement fins for a FinFET semiconductor device by performing a replacement growth process | Murat Kerem Akarvardar, Jody A. Fronheiser, Witold P. Maszara | 2016-01-19 |
| 9236479 | Methods of forming replacement gate structures and fins on FinFET devices and the resulting devices | Ruilong Xie | 2016-01-12 |
| 9236258 | Methods of forming gate structures for semiconductor devices using a replacement gate technique and the resulting devices | Ruilong Xie, Xiuyu Cai, Andy Wei, Qi Zhang, Michael Hargrove | 2016-01-12 |