Issued Patents All Time
Showing 1–25 of 79 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12365983 | Methods for forming a boron nitride film by a plasma enhanced atomic layer deposition process | — | 2025-07-22 |
| 12230497 | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process | Aurélie Kuroda | 2025-02-18 |
| 11676812 | Method for forming silicon nitride film selectively on top/bottom portions | Dai Ishikawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun +4 more | 2023-06-13 |
| 11646197 | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition | Timothee Blanquart, Mitsuya Utsuno, Yoshio Susa, Toshio Nakanishi | 2023-05-09 |
| 11637011 | Method of topology-selective film formation of silicon oxide | Masaru Zaitsu, Pei-Chia Chen | 2023-04-25 |
| 11626316 | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure | Mitsuya Utsuno, Yan Zhang, Yoshio Susa | 2023-04-11 |
| 11610774 | Methods for forming a topographically selective silicon oxide film by a cyclical plasma-enhanced deposition process | Aurélie Kuroda | 2023-03-21 |
| 11610775 | Method and apparatus for filling a gap | Viljami Pore, Werner Knaepen, Bert Jongbloed, Dieter Pierreux, Steven R. A. Van Aerde +2 more | 2023-03-21 |
| 11587783 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Shang Chen, Viljami Pore, Hideaki Fukuda, Suvi Haukka | 2023-02-21 |
| 11453943 | Method for forming carbon-containing silicon/metal oxide or nitride film by ALD using silicon precursor and hydrocarbon precursor | Hideaki Fukuda | 2022-09-27 |
| 11302527 | Methods for forming doped silicon oxide thin films | Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2022-04-12 |
| 11127589 | Method of topology-selective film formation of silicon oxide | Masaru Zaitsu | 2021-09-21 |
| 11069522 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Shang Chen, Viljami Pore, Hideaki Fukuda, Suvi Haukka | 2021-07-20 |
| 11056345 | Method for manufacturing semiconductor device | — | 2021-07-06 |
| 10847365 | Method of forming conformal silicon carbide film by cyclic CVD | Masaru Zaitsu | 2020-11-24 |
| 10784105 | Methods for forming doped silicon oxide thin films | Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2020-09-22 |
| 10755922 | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition | Timothee Blanquart, Mitsuya Utsuno, Yoshio Susa, Toshio Nakanishi | 2020-08-25 |
| 10720322 | Method for forming silicon nitride film selectively on top surface | Dai Ishikawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun +4 more | 2020-07-21 |
| 10655221 | Method for depositing oxide film by thermal ALD and PEALD | Hideaki Fukuda | 2020-05-19 |
| 10529554 | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches | Dai Ishikawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun +4 more | 2020-01-07 |
| 10510530 | Methods for forming doped silicon oxide thin films | Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2019-12-17 |
| 10468251 | Method for forming spacers using silicon nitride film for spacer-defined multiple patterning | Dai Ishikawa, Toshiharu Watarai | 2019-11-05 |
| 10435790 | Method of subatmospheric plasma-enhanced ALD using capacitively coupled electrodes with narrow gap | Masaru Zaitsu, Masaki Tokunaga, Hideaki Fukuda | 2019-10-08 |
| 10395917 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Shang Chen, Viljami Pore, Hideaki Fukuda, Suvi Haukka | 2019-08-27 |
| 10395919 | Method and apparatus for filling a gap | Zaitsu Masaru | 2019-08-27 |