Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11784043 | Formation of SiN thin films | Toshiya Suzuki, Viljami Pore, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba | 2023-10-10 |
| 11682660 | Semiconductor structure | Yuanhao Yu, Chun-Chen Chen | 2023-06-20 |
| 11587783 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2023-02-21 |
| 11367613 | Deposition of SiN | Viljami Pore, Ryoko Yamada, Antti Niskanen | 2022-06-21 |
| 11289327 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore | 2022-03-29 |
| 11133181 | Formation of SiN thin films | Toshiya Suzuki, Viljami Pore, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba | 2021-09-28 |
| 11069522 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2021-07-20 |
| 10793946 | Reaction chamber passivation and selective deposition of metallic films | Delphine Longrie, Antti Niskanen, Han Wang, Qi Xie, Jan Willem Maes +4 more | 2020-10-06 |
| 10741386 | Deposition of SiN | Viljami Pore, Ryoko Yamada, Antti Niskanen | 2020-08-11 |
| 10480064 | Reaction chamber passivation and selective deposition of metallic films | Delphine Longrie, Antti Niskanen, Han Wang, Qi Xie, Jan Willem Maes +4 more | 2019-11-19 |
| 10424477 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore | 2019-09-24 |
| 10410857 | Formation of SiN thin films | Toshiya Suzuki, Viljami Pore, Ryoko Yamada, Dai Ishikawa, Kunitoshi Namba | 2019-09-10 |
| 10395917 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2019-08-27 |
| 10262854 | Deposition of SiN | Viljami Pore, Ryoko Yamada, Antti Niskanen | 2019-04-16 |
| 10041166 | Reaction chamber passivation and selective deposition of metallic films | Delphine Longrie, Antti Niskanen, Han Wang, Qi Xie, Jan Willem Maes +4 more | 2018-08-07 |
| 10014212 | Selective deposition of metallic films | Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba | 2018-07-03 |
| 9947582 | Processes for preventing oxidation of metal thin films | Aurélie Kuroda, Takahiro Onuma, Dai Ishikawa | 2018-04-17 |
| 9905416 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2018-02-27 |
| 9824881 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore | 2017-11-21 |
| 9805974 | Selective deposition of metallic films | Toshiharu Watarai, Takahiro Onuma, Dai Ishikawa, Kunitoshi Namba | 2017-10-31 |
| 9803277 | Reaction chamber passivation and selective deposition of metallic films | Delphine Longrie, Antti Niskanen, Han Wang, Qi Xie, Jan Willem Maes +4 more | 2017-10-31 |
| 9576792 | Deposition of SiN | Viljami Pore, Ryoko Yamada, Antti Niskanen | 2017-02-21 |
| 9564309 | Si precursors for deposition of SiN at low temperatures | Antti Niskanen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi Haukka | 2017-02-07 |