Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11302527 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2022-04-12 |
| 10784105 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2020-09-22 |
| 10510530 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2019-12-17 |
| 10147600 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2018-12-04 |
| 9875893 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2018-01-23 |
| 9673092 | Film forming apparatus, and method of manufacturing semiconductor device | Ryu Nakano, Hiroki Arai | 2017-06-06 |
| 9564314 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2017-02-07 |
| 9556516 | Method for forming Ti-containing film by PEALD using TDMAT or TDEAT | Tatsuhiro Okabe | 2017-01-31 |
| 9455138 | Method for forming dielectric film in trenches by PEALD using H-containing gas | Atsuki Fukazawa, Hideaki Fukuda, Masaru Zaitsu | 2016-09-27 |
| 9368352 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2016-06-14 |
| 9153441 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2015-10-06 |
| 8912101 | Method for forming Si-containing film using two precursors by ALD | Naoto Tsuji, Atsuki Fukazawa, Suvi Haukka, Antti Niskanen, Hyung Sang Park | 2014-12-16 |
| 8679958 | Methods for forming doped silicon oxide thin films | Atsuki Fukazawa, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more | 2014-03-25 |
| 8329599 | Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogen | Atsuki Fukazawa | 2012-12-11 |
| 7807566 | Method for forming dielectric SiOCH film having chemical stability | Naoto Tsuji, Kiyohiro Matsushita, Manabu Kato | 2010-10-05 |