AF

Atsuki Fukazawa

AB Asm Ip Holding B.V.: 40 patents #16 of 620Top 3%
AK Asm Japan K.K.: 30 patents #2 of 128Top 2%
AN Asm International N.V.: 9 patents #28 of 197Top 15%
📍 Tama, JP: #1 of 402 inventorsTop 1%
Overall (All Time): #22,996 of 4,157,543Top 1%
79
Patents All Time

Issued Patents All Time

Showing 26–50 of 79 patents

Patent #TitleCo-InventorsDate
10262865 Methods for manufacturing semiconductor devices Toshihisa Nozawa 2019-04-16
10186420 Formation of silicon-containing thin films 2019-01-22
10179947 Method for forming conformal nitrided, oxidized, or carbonized dielectric film by atomic layer deposition 2019-01-15
10147600 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2018-12-04
9905416 Si precursors for deposition of SiN at low temperatures Antti Niskanen, Shang Chen, Viljami Pore, Hideaki Fukuda, Suvi Haukka 2018-02-27
9875893 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2018-01-23
9818601 Substrate processing apparatus and method of processing substrate Masaki Tokunaga, Masaru Zaitsu 2017-11-14
9812319 Method for forming film filled in trench without seam or void Hideaki Fukuda 2017-11-07
9754779 Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches Dai Ishikawa 2017-09-05
9627221 Continuous process incorporating atomic layer etching Masaru Zaitsu, Hideaki Fukuda 2017-04-18
9564314 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2017-02-07
9564309 Si precursors for deposition of SiN at low temperatures Antti Niskanen, Shang Chen, Viljami Pore, Hideaki Fukuda, Suvi Haukka 2017-02-07
9455138 Method for forming dielectric film in trenches by PEALD using H-containing gas Hideaki Fukuda, Noboru Takamure, Masaru Zaitsu 2016-09-27
9396956 Method of plasma-enhanced atomic layer etching 2016-07-19
9368352 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2016-06-14
9343297 Method for forming multi-element thin film constituted by at least five elements by PEALD Hideaki Fukuda 2016-05-17
9153441 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2015-10-06
9142393 Method for cleaning reaction chamber using pre-cleaning process Tatsuhiro Okabe 2015-09-22
9023737 Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment Julien Beynet, Ivo Raaijmakers 2015-05-05
8912101 Method for forming Si-containing film using two precursors by ALD Naoto Tsuji, Noboru Takamure, Suvi Haukka, Antti Niskanen, Hyung Sang Park 2014-12-16
8784950 Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine group Hideaki Fukuda 2014-07-22
8784951 Method for forming insulation film using non-halide precursor having four or more silicons Hideaki Fukuka 2014-07-22
8765233 Method for forming low-carbon CVD film for filling trenches Hisashi Tazawa, Shigeyuki Onizawa 2014-07-01
8722546 Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage control Takahiro Oka 2014-05-13
8679958 Methods for forming doped silicon oxide thin films Noboru Takamure, Hideaki Fukuda, Antti Niskanen, Suvi Haukka, Ryu Nakano +1 more 2014-03-25