Issued Patents All Time
Showing 26–50 of 95 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10490666 | Horizontal gate all around and FinFET device isolation | Shiyu Sun, Nam Sung Kim, Naomi Yoshida, Theresa Kramer Guarini, Sung Won Jun +4 more | 2019-11-26 |
| 10458040 | Upper dome with injection assembly | Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack +5 more | 2019-10-29 |
| 10276688 | Selective process for source and drain formation | Xinyu BAO, Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li +2 more | 2019-04-30 |
| 10205002 | Method of epitaxial growth shape control for CMOS applications | Xinyu BAO, Chun YAN, Hua Chung | 2019-02-12 |
| 10132003 | Heating modulators to improve epi uniformity tuning | Shu-Kwan LAU, Surajit Kumar, Joseph M. Ranish, Zhiyuan Ye, Kartik Shah +1 more | 2018-11-20 |
| 10125415 | Structure for relaxed SiGe buffers including method and apparatus for forming | Zhiyuan Ye, Keun-Yong Ban, Xinyu BAO | 2018-11-13 |
| 10043666 | Method for inter-chamber process | Xinyu BAO, Zhiyuan Ye, Keun-Yong Ban | 2018-08-07 |
| 10043870 | Method and structure to improve film stack with sensitive and reactive layers | Zhiyuan Ye, Xinyu BAO, David K. Carlson, Keun-Yong Ban | 2018-08-07 |
| 10026613 | Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films | Swaminathan Srinivasan, Fareen Adeni Khaja, Patrick M. Martin | 2018-07-17 |
| 10002759 | Method of forming structures with V shaped bottom on silicon substrate | Xinyu BAO, Chun YAN | 2018-06-19 |
| 9923081 | Selective process for source and drain formation | Xinyu BAO, Zhiyuan Ye, Flora Fong-Song CHANG, Abhishek Dube, Xuebin Li +2 more | 2018-03-20 |
| 9865735 | Horizontal gate all around and FinFET device isolation | Shiyu Sun, Naomi Yoshida, Theresa Kramer Guarini, Sung Won Jun, Vanessa Pena +4 more | 2018-01-09 |
| 9856580 | Apparatus for impurity layered epitaxy | Swaminathan Srinivasan | 2018-01-02 |
| 9845550 | Upper dome with injection assembly | Paul Brillhart, Anzhong Chang, Edric Tong, Kin Pong Lo, James Francis Mack +5 more | 2017-12-19 |
| 9799737 | Method for forming group III/V conformal layers on silicon substrates | Xinyu BAO, David K. Carlson, Zhiyuan Ye | 2017-10-24 |
| 9799531 | Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor films | Swaminathan Srinivasan, Fareen Adeni Khaja, Patrick M. Martin | 2017-10-24 |
| 9752224 | Structure for relaxed SiGe buffers including method and apparatus for forming | Zhiyuan Ye, Keun-Yong Ban, Xinyu BAO | 2017-09-05 |
| 9570328 | Substrate support for use with multi-zonal heating sources | Kailash Kiran Patalay | 2017-02-14 |
| 9530888 | MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates | Keun-Yong Ban, Zhiyuan Ye, Xinyu BAO, David K. Carlson | 2016-12-27 |
| 9512520 | Semiconductor substrate processing system | David K. Carlson, Satheesh Kuppurao | 2016-12-06 |
| 9476144 | Method and apparatus for the selective deposition of epitaxial germanium stressor alloys | David K. Carlson | 2016-10-25 |
| 9406507 | Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor films | Swaminathan Srinivasan, Fareen Adeni Khaja, Patrick M. Martin | 2016-08-02 |
| 9373502 | Structure for III-V devices on silicon | Xinyu BAO | 2016-06-21 |
| 9347696 | Compact ampoule thermal management system | David K. Carlson, Kenric Choi, Marcel E. Josephson, Dennis L. Demars | 2016-05-24 |
| 9299560 | Methods for depositing group III-V layers on substrates | Yi-Chiau Huang, Xinyu BAO | 2016-03-29 |