Issued Patents All Time
Showing 101–125 of 159 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 6566194 | Salicided gate for virtual ground arrays | Yu Sun, Chi Chang | 2003-05-20 |
| 6555436 | Simultaneous formation of charge storage and bitline to wordline isolation | Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers, Ravi Sunkavalli +3 more | 2003-04-29 |
| 6548334 | Capping layer | Tuan Pham, Sameer Haddad, Angela T. Hui | 2003-04-15 |
| 6548855 | Non-volatile memory dielectric as charge pump dielectric | Arvind Halliyal, Kuo-Tung Chang, Nicholas H. Tripsas, Wei Zheng, Unsoon Kim | 2003-04-15 |
| 6541816 | Planar structure for non-volatile memory devices | Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers, Ravi Sunkavalli +2 more | 2003-04-01 |
| 6509604 | Nitridation barriers for nitridated tunnel oxide for circuitry for flash technology and for LOCOS/STI isolation | Tuan Pham, Yu Sun, Chi Chang | 2003-01-21 |
| 6500713 | Method for repairing damage to charge trapping dielectric layer from bit line implantation | Nicholas H. Tripsas, Arvind Halliyal | 2002-12-31 |
| 6486029 | Integration of an ion implant hard mask structure into a process for fabricating high density memory cells | David K. Foote, Bharath Rangarajan, Stephan K. Park, Fei Wang, Dawn Hopper +2 more | 2002-11-26 |
| 6479348 | Method of making memory wordline hard mask extension | Tazrien Kamal, Minh Van Ngo, Jeffrey A. Shields, Jean Y. Yang, Emmanuil Lingunis +2 more | 2002-11-12 |
| 6475847 | Method for forming a semiconductor device with self-aligned contacts using a liner oxide layer | Minh Van Ngo, Yu Sun, Fei Wang, Chi Chang, Angela T. Hui +1 more | 2002-11-05 |
| 6468865 | Method of simultaneous formation of bitline isolation and periphery oxide | Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers, Ravi Sunkavalli +3 more | 2002-10-22 |
| 6465303 | Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memory | Narbeh Derhacobian, Janet Wang, Angela T. Hui, Tuan Pham, Ravi Sunkavalli +1 more | 2002-10-15 |
| 6465835 | Charge gain/charge loss junction leakage prevention for flash technology by using double isolation/capping layer between lightly doped drain and gate | Tuan Pham, Sameer Haddad, Angela T. Hui | 2002-10-15 |
| 6465306 | Simultaneous formation of charge storage and bitline to wordline isolation | Jean Y. Yang, Hidehiko Shiraiwa, Michael A. Van Buskirk, David Michael Rogers, Ravi Sunkavalli +3 more | 2002-10-15 |
| 6455373 | Semiconductor device having gate edges protected from charge gain/loss | Tuan Pham, Sameer Haddad, Angela T. Hui, Yu Sun, Chi Chang | 2002-09-24 |
| 6448608 | Capping layer | Tuan Pham, Sameer Haddad, Angela T. Hui | 2002-09-10 |
| 6444530 | Process for fabricating an integrated circuit with a self-aligned contact | Hung-Sheng Chen, Unsoon Kim, Yu Sun, Chi Chang, Mark Randolph +4 more | 2002-09-03 |
| 6440797 | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory | Yider Wu, Jean Y. Yang, Emmanuel H. Lingunis, Yu Sun | 2002-08-27 |
| 6436768 | Source drain implant during ONO formation for improved isolation of SONOS devices | Jean Y. Yang, Emmanuil Lingunis, Yider Wu, Tazrien Kamal, Yi He +2 more | 2002-08-20 |
| 6436766 | Process for fabricating high density memory cells using a polysilicon hard mask | Bharath Rangarajan, David K. Foote, Fei Wang, Dawn Hopper, Stephen Keetai Park +2 more | 2002-08-20 |
| 6433383 | Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device | Unsoon Kim, Kenneth Wo-Wai Au, David Chi, James M. Markarian | 2002-08-13 |
| 6420752 | Semiconductor device with self-aligned contacts using a liner oxide layer | Minh Van Ngo, Yu Sun, Fei Wang, Chi Chang, Angela T. Hui +1 more | 2002-07-16 |
| 6410443 | Method for removing semiconductor ARC using ARC CMP buffing | Steven C. Avanzino, Stephen Keetai Park, Kashmir Sahota, David Matsumoto | 2002-06-25 |
| 6403420 | Nitrogen implant after bit-line formation for ONO flash memory devices | Jean Y. Yang, Yider Wu, Yu Sun | 2002-06-11 |
| 6399446 | Process for fabricating high density memory cells using a metallic hard mask | Bharath Rangarajan, David K. Foote, Fei Wang, Dawn Hopper, Stephen Keetai Park +2 more | 2002-06-04 |