| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +3 more |
2017-12-26 |
$14,594,000 |
| 9818884 |
Strain compensation in transistors |
Van H. Le, Benjamin Chu-Kung, Ravi Pillarisetty, Willy Rachmady, Harold W. Kennel |
2017-11-14 |
$11,178,000 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more |
2017-11-14 |
$11,178,000 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2017-11-07 |
$13,901,000 |
| 9806180 |
Forming a non-planar transistor having a quantum well channel |
Chi On Chui, Prashant Majhi, Wilman Tsai |
2017-10-31 |
$13,240,000 |
| 9806195 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2017-10-31 |
$13,240,000 |
| 9806193 |
Stress in trigate devices using complimentary gate fill materials |
Titash Rakshit, Martin D. Giles, Ravi Pillarisetty |
2017-10-31 |
$13,240,000 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more |
2017-10-24 |
$10,797,000 |
| 9768269 |
Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Nancy Zelick, Robert S. Chau |
2017-09-19 |
$8,005,000 |
| 9761724 |
Semiconductor device structures and methods of forming semiconductor structures |
Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more |
2017-09-12 |
$10,213,000 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more |
2017-09-05 |
$9,844,000 |
| 9748391 |
Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz |
2017-08-29 |
$8,286,000 |
| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more |
2017-07-18 |
$6,909,000 |
| 9711598 |
Two-dimensional condensation for uniaxially strained semiconductor fins |
Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea |
2017-07-18 |
$6,909,000 |
| 9704981 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady +2 more |
2017-07-11 |
$8,311,000 |
| 9698265 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Niloy Mukherjee |
2017-07-04 |
|
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more |
2017-07-04 |
|
| 9691856 |
Extreme high mobility CMOS logic |
Suman Datta, Mantu K. Hudait, Mark L. Doczy, Amlan Majumdar, Justin K. Brask +3 more |
2017-06-27 |
$7,334,000 |
| 9691857 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2017-06-27 |
$7,334,000 |
| 9685508 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more |
2017-06-20 |
$9,273,000 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Niti Goel, Ravi Pillarisetty, Willy Rachmady, Gilbert Dewey, Benjamin Chu-Kung +4 more |
2017-06-20 |
$9,273,000 |
| 9680013 |
Non-planar device having uniaxially strained semiconductor body and method of making same |
Stephen M. Cea, Roza Kotlyar, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more |
2017-06-13 |
$8,497,000 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Willy Rachmady +4 more |
2017-05-30 |
$12,187,000 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more |
2017-05-30 |
$12,187,000 |
| 9640622 |
Selective epitaxially grown III-V materials based devices |
Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more |
2017-05-02 |
$12,076,000 |
