Issued Patents 2017
Showing 1–25 of 38 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 9853107 | Selective epitaxially grown III-V materials based devices | Matthew V. Metz, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung, Marko Radosavljevic +3 more | 2017-12-26 |
| 9818884 | Strain compensation in transistors | Van H. Le, Benjamin Chu-Kung, Ravi Pillarisetty, Willy Rachmady, Harold W. Kennel | 2017-11-14 |
| 9818870 | Transistor structure with variable clad/core dimension for stress and bandgap | Willy Rachmady, Van H. Le, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey +4 more | 2017-11-14 |
| 9812574 | Techniques and configurations for stacking transistors of an integrated circuit device | Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more | 2017-11-07 |
| 9806180 | Forming a non-planar transistor having a quantum well channel | Chi On Chui, Prashant Majhi, Wilman Tsai | 2017-10-31 |
| 9806195 | Method for fabricating transistor with thinned channel | Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more | 2017-10-31 |
| 9806193 | Stress in trigate devices using complimentary gate fill materials | Titash Rakshit, Martin D. Giles, Ravi Pillarisetty | 2017-10-31 |
| 9799759 | Techniques for forming non-planar germanium quantum well devices | Ravi Pillarisetty, Willy Rachmady, Uday Shah, Benjamin Chu-Kung, Marko Radosavljevic +4 more | 2017-10-24 |
| 9768269 | Fermi-level unpinning structures for semiconductive devices, processes of forming same, and systems containing same | Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Nancy Zelick, Robert S. Chau | 2017-09-19 |
| 9761724 | Semiconductor device structures and methods of forming semiconductor structures | Justin K. Brask, Brian S. Doyle, Uday Shah, Suman Datta, Amlan Majumdar +1 more | 2017-09-12 |
| 9755062 | III-N material structure for gate-recessed transistors | Han Wui Then, Marko Radosavljevic, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty +2 more | 2017-09-05 |
| 9748391 | Field effect transistor with narrow bandgap source and drain regions and method of fabrication | Robert S. Chau, Suman Datta, Justin K. Brask, Mark L. Doczy, Matthew V. Metz | 2017-08-29 |
| 9711591 | Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby | Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more | 2017-07-18 |
| 9711598 | Two-dimensional condensation for uniaxially strained semiconductor fins | Nancy Zelick, Been-Yih Jin, Markus Kuhn, Stephen M. Cea | 2017-07-18 |
| 9704981 | Techniques for forming contacts to quantum well transistors | Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Marko Radosavljevic, Willy Rachmady +2 more | 2017-07-11 |
| 9698265 | Strained channel region transistors employing source and drain stressors and systems including the same | Van H. Le, Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Niloy Mukherjee | 2017-07-04 |
| 9698013 | Methods and structures to prevent sidewall defects during selective epitaxy | Niloy Mukherjee, Niti Goel, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz +6 more | 2017-07-04 |
| 9691856 | Extreme high mobility CMOS logic | Suman Datta, Mantu K. Hudait, Mark L. Doczy, Amlan Majumdar, Justin K. Brask +3 more | 2017-06-27 |
| 9691857 | Group III-N nanowire transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2017-06-27 |
| 9685508 | High voltage field effect transistors | Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Matthew V. Metz +3 more | 2017-06-20 |
| 9685381 | Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon | Niti Goel, Ravi Pillarisetty, Willy Rachmady, Gilbert Dewey, Benjamin Chu-Kung +4 more | 2017-06-20 |
| 9680013 | Non-planar device having uniaxially strained semiconductor body and method of making same | Stephen M. Cea, Roza Kotlyar, Martin D. Giles, Tahir Ghani, Kelin J. Kuhn +2 more | 2017-06-13 |
| 9666492 | CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture | Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Willy Rachmady +4 more | 2017-05-30 |
| 9666583 | Methods of containing defects for non-silicon device engineering | Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more | 2017-05-30 |
| 9640622 | Selective epitaxially grown III-V materials based devices | Niti Goel, Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic +2 more | 2017-05-02 |