| 9818884 |
Strain compensation in transistors |
Benjamin Chu-Kung, Jack T. Kavalieros, Ravi Pillarisetty, Willy Rachmady, Harold W. Kennel |
2017-11-14 |
$11,178,000 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Ravi Pillarisetty, Marko Radosavljevic, Gilbert Dewey, Niloy Mukherjee +4 more |
2017-11-14 |
$11,178,000 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2017-11-07 |
$13,901,000 |
| 9786786 |
Non-planar quantum well device having interfacial layer and method of forming same |
Willy Rachmady, Ravi Pillarisetty, Robert S. Chau |
2017-10-10 |
$9,084,000 |
| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Niloy Mukherjee, Matthew V. Metz, James M. Powers, Benjamin Chu-Kung, Mark R. Lemay +6 more |
2017-07-18 |
$6,909,000 |
| 9698265 |
Strained channel region transistors employing source and drain stressors and systems including the same |
Harold W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Niloy Mukherjee |
2017-07-04 |
|
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Sansaptak Dasgupta, Seung Hoon Sung, Sanaz K. Gardner +3 more |
2017-07-04 |
|
| 9691843 |
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition |
Annalisa Cappellani, Peter G. Tolchinsky, Kelin J. Kuhn, Glenn A. Glass |
2017-06-27 |
$7,334,000 |
| 9691848 |
Semiconductor devices with germanium-rich active layers and doped transition layers |
Willy Rachmady, Ravi Pillarisetty, Jessica S. Kachian, Marc C. French, Aaron A. Budrevich |
2017-06-27 |
$7,334,000 |
| 9673302 |
Conversion of strain-inducing buffer to electrical insulator |
Annalisa Cappellani, Glenn A. Glass, Kelin J. Kuhn, Stephen M. Cea |
2017-06-06 |
$12,588,000 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more |
2017-05-30 |
$12,187,000 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Marko Radosavljevic, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros +4 more |
2017-05-30 |
$12,187,000 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Niti Goel, Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz +7 more |
2017-05-02 |
$12,076,000 |
| 9640671 |
Deep gate-all-around semiconductor device having germanium or group III-V active layer |
Ravi Pillarisetty, Willy Rachmady, Seung Hoon Sung, Jessica S. Kachian, Jack T. Kavalieros +5 more |
2017-05-02 |
$12,076,000 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Niti Goel, Jack T. Kavalieros, Sansaptak Dasgupta +7 more |
2017-04-25 |
$8,972,000 |
| 9614093 |
Strain compensation in transistors |
Benjamin Chu-Kung, Harold Hal W. Kennel, Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros |
2017-04-04 |
$8,141,000 |
| 9608055 |
Semiconductor device having germanium active layer with underlying diffusion barrier layer |
Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Harold W. Kennel |
2017-03-28 |
$8,391,000 |
| 9590089 |
Variable gate width for gate all-around transistors |
Willy Rachmady, Ravi Pillarisetty, Jack T. Kavalieros, Robert S. Chau, Seung Hoon Sung |
2017-03-07 |
$9,849,000 |
| 9583396 |
Making a defect free fin based device in lateral epitaxy overgrowth region |
Niti Goel, Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz +3 more |
2017-02-28 |
$9,011,000 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Niti Goel, Marko Radosavljevic, Gilbert Dewey +8 more |
2017-02-14 |
$9,787,000 |
| 9559160 |
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition |
Annalisa Cappellani, Peter G. Tolchinsky, Kelin J. Kuhn, Glenn A. Glass |
2017-01-31 |
$9,360,000 |
