| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more |
2017-07-18 |
| 9698013 |
Methods and structures to prevent sidewall defects during selective epitaxy |
Niloy Mukherjee, Sanaz K. Gardner, Pragyansri Pathi, Matthew V. Metz, Sansaptak Dasgupta +6 more |
2017-07-04 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey, Benjamin Chu-Kung +4 more |
2017-06-20 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady, Matthew V. Metz +6 more |
2017-05-30 |
| 9653559 |
Methods to enhance doping concentration in near-surface layers of semiconductors and methods of making same |
Niloy Mukherjee, Gilbert Dewey, Marko Radosavljevic, Sanaz Kabehie, Matthew V. Metz +1 more |
2017-05-16 |
| 9640622 |
Selective epitaxially grown III-V materials based devices |
Gilbert Dewey, Niloy Mukherjee, Matthew V. Metz, Marko Radosavljevic, Benjamin Chu-Kung +2 more |
2017-05-02 |
| 9640537 |
Non-silicon device heterolayers on patterned silicon substrate for CMOS by combination of selective and conformal epitaxy |
Robert S. Chau, Jack T. Kavalieros, Benjamin Chu-Kung, Matthew V. Metz, Niloy Mukherjee +7 more |
2017-05-02 |
| 9634007 |
Trench confined epitaxially grown device layer(s) |
Ravi Pillarisetty, Seung Hoon Sung, Jack T. Kavalieros, Sansaptak Dasgupta, Van H. Le +7 more |
2017-04-25 |
| 9590069 |
Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
Sansaptak Dasgupta, Han Wui Then, Marko Radosavljevic, Niloy Mukherjee, Sanaz K. Gardner +3 more |
2017-03-07 |
| 9583396 |
Making a defect free fin based device in lateral epitaxy overgrowth region |
Benjamin Chu-Kung, Sansaptak Dasgupta, Niloy Mukherjee, Matthew V. Metz, Van H. Le +3 more |
2017-02-28 |
| 9570614 |
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation |
Ravi Pillarisetty, Sansaptak Dasgupta, Van H. Le, Marko Radosavljevic, Gilbert Dewey +8 more |
2017-02-14 |