| 9853107 |
Selective epitaxially grown III-V materials based devices |
Matthew V. Metz, Jack T. Kavalieros, Gilbert Dewey, Willy Rachmady, Benjamin Chu-Kung +3 more |
2017-12-26 |
$14,594,000 |
| 9847448 |
Forming LED structures on silicon fins |
Sansaptak Dasgupta, Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Sanaz K. Gardner |
2017-12-19 |
$19,551,000 |
| 9847432 |
Forming III-V device structures on (111) planes of silicon fins |
Sansaptak Dasgupta, Han Wui Then, Sanaz K. Gardner, Benjamin Chu-Kung, Seung Hoon Sung +1 more |
2017-12-19 |
$19,551,000 |
| 9818870 |
Transistor structure with variable clad/core dimension for stress and bandgap |
Willy Rachmady, Van H. Le, Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee +4 more |
2017-11-14 |
$11,178,000 |
| 9818847 |
Non-planar III-V field effect transistors with conformal metal gate electrode and nitrogen doping of gate dielectric interface |
Gilbert Dewey, Robert S. Chau, Han Wui Then, Scott B. Clendenning, Ravi Pillarisetty |
2017-11-14 |
$11,178,000 |
| 9812574 |
Techniques and configurations for stacking transistors of an integrated circuit device |
Ravi Pillarisetty, Charles C. Kuo, Han Wui Then, Gilbert Dewey, Willy Rachmady +3 more |
2017-11-07 |
$13,901,000 |
| 9806203 |
Nonplanar III-N transistors with compositionally graded semiconductor channels |
Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung, Sanaz K. Gardner +1 more |
2017-10-31 |
$13,240,000 |
| 9806195 |
Method for fabricating transistor with thinned channel |
Justin K. Brask, Robert S. Chau, Suman Datta, Mark L. Doczy, Brian S. Doyle +3 more |
2017-10-31 |
$13,240,000 |
| 9799759 |
Techniques for forming non-planar germanium quantum well devices |
Ravi Pillarisetty, Jack T. Kavalieros, Willy Rachmady, Uday Shah, Benjamin Chu-Kung +4 more |
2017-10-24 |
$10,797,000 |
| 9755062 |
III-N material structure for gate-recessed transistors |
Han Wui Then, Uday Shah, Niloy Mukherjee, Ravi Pillarisetty, Benjamin Chu-Kung +2 more |
2017-09-05 |
$9,844,000 |
| 9748338 |
Preventing isolation leakage in III-V devices |
Gilbert Dewey, Ravi Pillarisetty, Benjamin Chu-Kung, Niloy Mukherjee |
2017-08-29 |
$8,286,000 |
| 9748371 |
Transition metal dichalcogenide semiconductor assemblies |
Brian S. Doyle, Ravi Pillarisetty, Niloy Mukherjee, Sansaptak Dasgupta, Han Wui Then +1 more |
2017-08-29 |
$8,286,000 |
| 9716149 |
Group III-N transistors on nanoscale template structures |
Han Wui Then, Sansaptak Dasgupta, Benjamin Chu-Kung, Sanaz K. Gardner, Seung Hoon Sung +1 more |
2017-07-25 |
$17,281,000 |
| 9711591 |
Methods of forming hetero-layers with reduced surface roughness and bulk defect density of non-native surfaces and the structures formed thereby |
Niloy Mukherjee, Matthew V. Metz, James M. Powers, Van H. Le, Benjamin Chu-Kung +6 more |
2017-07-18 |
$6,909,000 |
| 9704981 |
Techniques for forming contacts to quantum well transistors |
Ravi Pillarisetty, Benjamin Chu-Kung, Mantu K. Hudait, Jack T. Kavalieros, Willy Rachmady +2 more |
2017-07-11 |
$8,311,000 |
| 9698222 |
Method of fabricating semiconductor structures on dissimilar substrates |
Benjamin Chu-Kung, Sherry R. Taft, Van H. Le, Sansaptak Dasgupta, Seung Hoon Sung +3 more |
2017-07-04 |
|
| 9691857 |
Group III-N nanowire transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2017-06-27 |
$7,334,000 |
| 9685381 |
Integrating VLSI-compatible fin structures with selective epitaxial growth and fabricating devices thereon |
Niti Goel, Ravi Pillarisetty, Willy Rachmady, Jack T. Kavalieros, Gilbert Dewey +4 more |
2017-06-20 |
$9,273,000 |
| 9685508 |
High voltage field effect transistors |
Han Wui Then, Robert S. Chau, Benjamin Chu-Kung, Gilbert Dewey, Jack T. Kavalieros +3 more |
2017-06-20 |
$9,273,000 |
| 9673045 |
Integration of III-V devices on Si wafers |
Sansaptak Dasgupta, Han Wui Then, Seung Hoon Sung, Sanaz K. Gardner, Benjamin Chu-Kung +1 more |
2017-06-06 |
$12,588,000 |
| 9666708 |
III-N transistors with enhanced breakdown voltage |
Han Wui Then, Benjamin Chu-Kung, Sansaptak Dasgupta, Robert S. Chau, Seung Hoon Sung +1 more |
2017-05-30 |
$12,187,000 |
| 9666583 |
Methods of containing defects for non-silicon device engineering |
Niti Goel, Ravi Pillarisetty, Niloy Mukherjee, Robert S. Chau, Willy Rachmady +6 more |
2017-05-30 |
$12,187,000 |
| 9666492 |
CMOS implementation of germanium and III-V nanowires and nanoribbons in gate-all-around architecture |
Ravi Pillarisetty, Gilbert Dewey, Niloy Mukherjee, Jack T. Kavalieros, Willy Rachmady +4 more |
2017-05-30 |
$12,187,000 |
| 9660067 |
III-N transistors with epitaxial layers providing steep subthreshold swing |
Han Wui Then, Sansaptak Dasgupta, Robert S. Chau |
2017-05-23 |
$7,972,000 |
| 9660085 |
Wide band gap transistors on non-native semiconductor substrates and methods of manufacture thereof |
Han Wui Then, Robert S. Chau, Sansaptak Dasgupta, Benjamin Chu-Kung, Seung Hoon Sung +2 more |
2017-05-23 |
$7,972,000 |
